BUY G40N60UFD https://www.utsource.net/itm/p/11240803.html

Description: This is an insulated gate bipolar transistor (IGBT) with a maximum collector-emitter voltage of 600V and a maximum collector current of 40A. Features: Low on-state voltage drop Low switching losses High speed switching High surge current capability Low noise Low EMI Applications: Motor control Power supplies Uninterruptible power supplies AC and DC drives Welding equipment Lighting ballasts (For reference only)