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TGL40N120FD

Specifications

SKU: 11240811

BUY TGL40N120FD https://www.utsource.net/itm/p/11240811.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCE - - 1200 V
Collector Current IC - 40 - A
Gate-Emitter Voltage VGE -15 - 20 V
Power Dissipation PT - - 1600 W
Junction Temperature TJ -50 - 175 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for TGL40N120FD

  1. Handling Precautions:

    • Avoid exposing the device to temperatures outside the specified range.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting and Soldering:

    • Ensure that the mounting surface is clean and free of contaminants.
    • Use a soldering iron with a temperature not exceeding 300°C.
    • Soldering time should not exceed 10 seconds per joint.
    • Allow the device to cool naturally after soldering.
  3. Operation:

    • Do not exceed the maximum ratings for collector-emitter voltage, collector current, gate-emitter voltage, and power dissipation.
    • Ensure adequate heat sinking to maintain junction temperature within the specified limits.
    • Apply gate drive signals carefully to avoid overvoltage or excessive current through the gate.
  4. Storage:

    • Store the device in a dry, cool place away from direct sunlight.
    • Keep the device in its original packaging until ready for use.
  5. Testing:

    • Use appropriate test equipment and methods to ensure accurate measurements.
    • Follow safety guidelines when testing high-voltage and high-current devices.
  6. Troubleshooting:

    • If the device fails to operate correctly, check for proper connections and power supply.
    • Verify that the device is not overheating and that the heat sink is functioning properly.
    • Consult the datasheet or contact the manufacturer for further assistance.
(For reference only)

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