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G60N100BNTD

Specifications

SKU: 11240827

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Parameter Description Value Unit
Part Number Device Identifier G60N100BNTD -
Type Component Type N-Channel MOSFET -
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current 60 A
RDS(on) On-State Resistance at VGS = 10V 3.5
PTOT Total Power Dissipation 280 W
TJ Junction Temperature Range -55 to +175 °C
TSTG Storage Temperature Range -55 to +175 °C
Package Housing Type TO-247-3L -
Lead Finish Lead Surface Treatment Matte Tin -

Instructions for Use:

  1. Handling and Storage:

    • Store in a dry, cool place to avoid moisture damage.
    • Handle with care to prevent static discharge, which can damage the device.
  2. Mounting:

    • Ensure proper heat sinking to manage the thermal resistance and prevent overheating.
    • Use a thermal compound between the device and the heat sink for better thermal conductivity.
  3. Electrical Connections:

    • Connect the drain (D), gate (G), and source (S) terminals correctly.
    • Apply a suitable gate drive voltage to ensure the MOSFET operates within its safe operating area (SOA).
  4. Operational Precautions:

    • Do not exceed the maximum ratings for VDS, VGS, and ID.
    • Ensure the junction temperature (TJ) does not exceed 175°C.
    • Avoid operating the device in conditions that could cause thermal runaway.
  5. Testing:

    • Use a multimeter or an oscilloscope to verify the correct operation of the MOSFET.
    • Test the device in a controlled environment before integrating it into the final application.
  6. Soldering:

    • Use a temperature-controlled soldering iron and follow the recommended soldering profile to avoid thermal shock.
    • Allow the device to cool down naturally after soldering to prevent damage from rapid cooling.
  7. Documentation:

    • Refer to the datasheet for detailed specifications and additional information.
    • Keep the datasheet accessible for reference during design and troubleshooting.
(For reference only)

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