Specifications
SKU: 11240827
Parameter | Description | Value | Unit |
---|---|---|---|
Part Number | Device Identifier | G60N100BNTD | - |
Type | Component Type | N-Channel MOSFET | - |
VDS | Drain-to-Source Voltage | 100 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current | 60 | A |
RDS(on) | On-State Resistance at VGS = 10V | 3.5 | mΩ |
PTOT | Total Power Dissipation | 280 | W |
TJ | Junction Temperature Range | -55 to +175 | °C |
TSTG | Storage Temperature Range | -55 to +175 | °C |
Package | Housing Type | TO-247-3L | - |
Lead Finish | Lead Surface Treatment | Matte Tin | - |
Instructions for Use:
Handling and Storage:
- Store in a dry, cool place to avoid moisture damage.
- Handle with care to prevent static discharge, which can damage the device.
Mounting:
- Ensure proper heat sinking to manage the thermal resistance and prevent overheating.
- Use a thermal compound between the device and the heat sink for better thermal conductivity.
Electrical Connections:
- Connect the drain (D), gate (G), and source (S) terminals correctly.
- Apply a suitable gate drive voltage to ensure the MOSFET operates within its safe operating area (SOA).
Operational Precautions:
- Do not exceed the maximum ratings for VDS, VGS, and ID.
- Ensure the junction temperature (TJ) does not exceed 175°C.
- Avoid operating the device in conditions that could cause thermal runaway.
Testing:
- Use a multimeter or an oscilloscope to verify the correct operation of the MOSFET.
- Test the device in a controlled environment before integrating it into the final application.
Soldering:
- Use a temperature-controlled soldering iron and follow the recommended soldering profile to avoid thermal shock.
- Allow the device to cool down naturally after soldering to prevent damage from rapid cooling.
Documentation:
- Refer to the datasheet for detailed specifications and additional information.
- Keep the datasheet accessible for reference during design and troubleshooting.
Inquiry - G60N100BNTD