Specifications
SKU: 11240834
Parameter | Value | Unit |
---|---|---|
Type | MOSFET | - |
Package | TO-220 | - |
Maximum Drain Current (ID) | 50 | A |
Maximum Drain-to-Source Voltage (VDS) | 600 | V |
Maximum Gate-to-Source Voltage (VGS) | ±20 | V |
Continuous Drain Current (ID) at 25°C | 50 | A |
Continuous Drain Current (ID) at 100°C | 30 | A |
RDS(on) at 10V VGS | 0.045 | Ω |
Total Power Dissipation (PD) at 25°C | 300 | W |
Junction Temperature (TJ) | -55 to 150 | °C |
Storage Temperature (TSTG) | -55 to 150 | °C |
Instructions for Use:
Handling Precautions:
- Handle the 50G60HD with care to avoid damage to the leads or body.
- Use proper ESD (Electrostatic Discharge) protection to prevent damage from static electricity.
Mounting:
- Ensure that the mounting surface is clean and flat.
- Apply a suitable thermal compound between the heat sink and the MOSFET to improve thermal conductivity.
- Tighten the mounting screws to the recommended torque to ensure good thermal contact without causing damage to the package.
Soldering:
- Preheat the MOSFET to 125°C before soldering to minimize thermal shock.
- Use a soldering iron with a temperature setting of 350°C for a maximum of 3 seconds per joint.
- Allow the MOSFET to cool naturally after soldering.
Operating Conditions:
- Do not exceed the maximum ratings specified in the table.
- Ensure adequate cooling to keep the junction temperature within the safe operating range.
- Use a gate resistor to limit the current during switching to prevent oscillations and reduce electromagnetic interference (EMI).
Testing:
- Use a multimeter to check the continuity and resistance values of the MOSFET.
- Test the MOSFET in a controlled environment to ensure it meets the specified performance parameters.
Storage:
- Store the 50G60HD in a dry, cool place away from direct sunlight and sources of heat.
- Keep the MOSFETs in their original packaging until ready for use to protect them from moisture and static discharge.
Inquiry - 50G60HD