Instructions for Use:

1. Voltage Handling:

   • Ensure that the drain-source voltage (V_DS) does not exceed ±30V to prevent damage to the device.
   • The gate-source voltage (V_GS) should be kept within ±12V to avoid gate oxide breakdown.

2. Current Handling:

   • The continuous drain current (I_D) should not exceed 9A at an ambient temperature of 25°C.
   • For pulse applications, the maximum pulse drain current (I_D(p)) is 18A with a pulse width of 10 ms and a case temperature of 25°C.

3. Power Dissipation:

   • The total power dissipation (P_TOT) should not exceed 1.4W at a case temperature of 25°C to ensure reliable operation.

4. Temperature Management:

   • The junction temperature (T_J) must not exceed 150°C to prevent thermal runaway and potential failure.
   • Store and operate the device within the temperature range of -55°C to 150°C.

5. Thermal Management:

   • Use appropriate heat sinks or cooling methods to manage the thermal resistance (R_θJC) of 65 K/W, ensuring efficient heat dissipation from the junction to the case.

6. Handling Precautions:

   • Handle the device with care to avoid static discharge, which can damage the gate oxide.
   • Follow proper soldering techniques to avoid thermal shock and mechanical stress during assembly.

7. Application Notes:

   • Refer to the datasheet for detailed application notes, including circuit diagrams and recommended operating conditions.
   • Ensure that all connections are secure and free from short circuits to prevent damage to the device and surrounding components.