Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use a thermal interface material (TIM) between the IGBT and the heatsink for optimal thermal performance.

2. Biasing:

   • Apply gate-emitter voltage (V GE) within the specified range to avoid damage.
   • Use a gate resistor to limit current and prevent oscillations.

3. Current Handling:

   • Do not exceed the continuous collector current (I C) rating.
   • For pulse applications, ensure the pulse duration does not exceed the specified limit (10ms).

4. Temperature Management:

   • Monitor the junction temperature (T J) to prevent overheating.
   • Store the device within the storage temperature range (T STG) to avoid damage.

5. Handling:

   • Handle with care to avoid mechanical stress.
   • Use appropriate ESD protection to prevent damage from static electricity.

6. Testing:

   • Perform initial testing at low power levels to ensure correct operation.
   • Regularly inspect the device for signs of wear or damage.

7. Soldering:

   • Use a controlled soldering process to avoid exceeding the maximum junction temperature.
   • Allow sufficient time for cooling after soldering to prevent thermal shock.