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L6234D

Specifications

SKU: 11243767

BUY L6234D https://www.utsource.net/itm/p/11243767.html

Parameter Symbol Min Typical Max Unit
Supply Voltage Vcc 8 - 45 V
Output Current per Channel Iout - 2 3.5 A
Operating Temperature Range Toper -40 - 125 °C
Storage Temperature Range Tstg -65 - 150 °C
Thermal Resistance (Junction to Case) RθJC - 2.5 - °C/W
Maximum Junction Temperature Tjmax - - 150 °C
Input Logic High Voltage VIH 2.3 - 5.5 V
Input Logic Low Voltage VIL 0 - 0.8 V
Output Saturation Voltage (High Side) Vsat(HS) 1.8 - 2.5 V
Output Saturation Voltage (Low Side) Vsat(LS) 0.5 - 1.5 V

Instructions for Using L6234D:

  1. Supply Voltage:

    • Ensure the supply voltage is within the range of 8V to 45V. Exceeding these limits can damage the device.
  2. Output Current:

    • The maximum output current per channel is 3.5A. For reliable operation, do not exceed 2A continuously.
  3. Temperature Considerations:

    • The operating temperature range is from -40°C to 125°C. Ensure the device is used within this range to avoid thermal damage.
    • The storage temperature range is from -65°C to 150°C. Store the device in a suitable environment to prevent damage.
  4. Thermal Management:

    • Monitor the junction temperature to ensure it does not exceed 150°C. Use appropriate heat sinks or cooling methods if necessary.
  5. Input Logic Levels:

    • Ensure input logic high voltage (VIH) is between 2.3V and 5.5V.
    • Ensure input logic low voltage (VIL) is between 0V and 0.8V.
  6. Output Saturation Voltages:

    • The output saturation voltage for the high side (Vsat(HS)) should be between 1.8V and 2.5V.
    • The output saturation voltage for the low side (Vsat(LS)) should be between 0.5V and 1.5V.
  7. Circuit Design:

    • Use appropriate decoupling capacitors near the power supply pins to reduce noise and improve stability.
    • Ensure proper PCB layout to minimize inductance and resistance in critical paths.
  8. Protection:

    • Implement overcurrent protection to prevent damage from excessive load currents.
    • Use flyback diodes across inductive loads to protect against back EMF.
  9. Testing:

    • Test the device under typical operating conditions before deploying it in a final application.
    • Verify all connections and parameters to ensure correct operation.
  10. Documentation:

    • Refer to the datasheet and application notes for more detailed information and specific use cases.
(For reference only)

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