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IHW20N120R3

Specifications

SKU: 11244469

BUY IHW20N120R3 https://www.utsource.net/itm/p/11244469.html

Parameter Symbol Min Typ Max Unit Notes
Drain-Source Voltage VDS - 1200 - V
Gate-Source Voltage VGS -20 0 20 V
Continuous Drain Current ID - 20 - A @ TC = 25°C
Power Dissipation PTOT - - 260 W @ TC = 25°C
Junction Temperature TJ - - 175 °C
Storage Temperature TSTG -55 - 150 °C

Instructions for Use

  1. Handling and Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Handle with care to avoid static discharge which can damage the component.
  2. Mounting:

    • Ensure proper heat sinking to manage power dissipation and maintain junction temperature within safe limits.
    • Use appropriate mounting hardware to secure the device firmly.
  3. Electrical Connections:

    • Apply gate-source voltage (VGS) within the specified range to avoid damaging the gate oxide.
    • Ensure drain-source voltage (VDS) does not exceed the maximum rating to prevent breakdown.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it stays below 175°C.
    • Use thermal paste or thermal interface materials between the device and the heatsink for efficient heat transfer.
  5. Operational Considerations:

    • Avoid exceeding the continuous drain current (ID) at high temperatures to prevent overheating.
    • Regularly inspect the device and connections for signs of wear or damage.
  6. Testing:

    • Perform initial testing under controlled conditions to verify proper operation.
    • Use appropriate test equipment and follow safety guidelines to prevent injury or damage.
  7. Compliance:

    • Ensure the device is used in compliance with all relevant safety and regulatory standards.
(For reference only)

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