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Specifications
SKU: 11247170
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Breakdown Voltage | BVdss | - | 600 | - | V | Drain-to-Source Breakdown Voltage |
| Continuous Drain Current | Id | - | 8 | - | A | Continuous Drain Current (Tc = 25°C) |
| Pulse Drain Current | Ipp | - | 24 | - | A | Pulse Drain Current (t = 10 μs, duty cycle = 0.01%) |
| Gate Threshold Voltage | Vgs(th) | 1 | 2 | 4 | V | Gate Threshold Voltage |
| On-State Resistance | Rds(on) | - | 0.6 | - | Ω | On-State Resistance at Vgs = 10V, Id = 8A |
| Input Capacitance | Ciss | - | 700 | - | pF | Input Capacitance |
| Output Capacitance | Coss | - | 200 | - | pF | Output Capacitance |
| Reverse Transfer Capacitance | Crss | - | 120 | - | pF | Reverse Transfer Capacitance |
| Total Power Dissipation | Ptot | - | 120 | - | W | Total Power Dissipation (Tc = 25°C) |
| Junction Temperature | Tj | - | - | 175 | °C | Maximum Junction Temperature |
| Storage Temperature | Tstg | -55 | - | 150 | °C | Operating Temperature Range |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Use a thermal interface material (TIM) between the device and the heat sink to improve thermal conductivity.
Biasing:
- Apply a gate-source voltage (Vgs) within the specified range to turn the device on or off.
- Ensure the gate voltage does not exceed the maximum ratings to avoid damage.
Current Handling:
- Do not exceed the continuous drain current (Id) rating to prevent overheating.
- For pulse applications, ensure the pulse duration and duty cycle do not exceed the specified limits.
Voltage Handling:
- Ensure the drain-to-source voltage (Vds) does not exceed the breakdown voltage (BVdss) to avoid device failure.
Capacitance Considerations:
- Account for the input (Ciss), output (Coss), and reverse transfer (Crss) capacitances in circuit design to minimize switching losses and ensure stable operation.
Thermal Management:
- Monitor the junction temperature (Tj) to ensure it remains below the maximum limit.
- Use appropriate cooling methods such as forced air cooling or liquid cooling if necessary.
Storage:
- Store the device in a dry environment within the specified storage temperature range to prevent damage.
Handling:
- Handle the device with care to avoid mechanical stress or damage to the leads.
- Follow ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.
Inquiry - RFP1386
