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SST29EE010-120-4C-EH

Specifications

SKU: 11248130

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Parameter Description Value Unit
Device Type Non-Volatile Memory 1M-bit (128K x 8) Serial Flash EEPROM -
Package Package Type SOIC-8 -
Operating Voltage (Vcc) Supply Voltage Range 2.7 to 5.5 V
Operating Temperature (Ta) Temperature Range -40 to +85 °C
Data Retention Data Retention Time 100 Years
Write Cycle Endurance Number of Write Cycles 1,000,000 -
Access Time (tACC) Access Time 55 ns
Page Write Time (tPP) Page Write Time 5 ms
Sector Erase Time (tSE) Sector Erase Time 30 ms
Chip Erase Time (tCE) Chip Erase Time 60 ms
Standby Current (ISB) Standby Current 1 μA
Active Current (IACT) Active Current 5 mA
Programming Current (IPGM) Programming Current 10 mA
Erase Current (IERASE) Erase Current 10 mA
Package Marking Package Marking SST29EE010-120-4C-EH -

Instructions:

  1. Power Supply:

    • Ensure that the supply voltage (Vcc) is within the specified range of 2.7V to 5.5V.
    • Connect the ground (GND) pin to a stable ground reference.
  2. Pin Configuration:

    • Vcc: Power supply
    • GND: Ground
    • CS (Chip Select): Low to enable the device
    • SCK (Serial Clock): Clock input for serial communication
    • SI (Serial Input): Data input for serial communication
    • SO (Serial Output): Data output for serial communication
    • WP (Write Protect): High to enable write protection, low to allow writes
    • HOLD (Hold): High to allow normal operation, low to pause ongoing operations
  3. Communication Protocol:

    • The SST29EE010-120-4C-EH uses a serial communication protocol. Ensure that the clock (SCK) and data lines (SI, SO) are properly configured and synchronized.
    • Use the appropriate commands for read, write, and erase operations as specified in the device datasheet.
  4. Read Operation:

    • Set CS low to select the device.
    • Send the read command followed by the address of the memory location.
    • Read the data from the SO line.
  5. Write Operation:

    • Set CS low to select the device.
    • Send the write enable command.
    • Send the write command followed by the address and data.
    • Wait for the write cycle to complete (tPP).
  6. Erase Operation:

    • Set CS low to select the device.
    • Send the sector or chip erase command.
    • Wait for the erase cycle to complete (tSE or tCE).
  7. Power Management:

    • To minimize power consumption, set CS high when the device is not in use.
    • Ensure that the standby current (ISB) is within the specified limit to avoid excessive power drain.
  8. Write Protection:

    • Set the WP pin high to prevent accidental writes to the memory.
    • Set the WP pin low to allow write operations.
  9. Handling and Storage:

    • Store the device in a dry, static-free environment.
    • Handle with care to avoid damage to the pins and package.

For detailed command sequences and timing diagrams, refer to the device datasheet provided by the manufacturer.

(For reference only)

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