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PUMZ1

Specifications

SKU: 11249219

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Parameter Description Value
Part Number Component Identifier PUMZ1
Type Device Type MOSFET
Package Physical Enclosure TO-220
Drain-Source Voltage (Vds) Maximum Voltage between Drain and Source 600 V
Gate-Source Voltage (Vgs) Maximum Voltage between Gate and Source ±20 V
Continuous Drain Current (Id) Maximum Continuous Current through Drain 15 A
Pulse Drain Current (Idm) Maximum Pulse Current through Drain 80 A
Power Dissipation (Ptot) Maximum Power Dissipation 125 W
Junction Temperature (Tj) Operating Temperature Range -55°C to +175°C
Storage Temperature (Tstg) Storage Temperature Range -65°C to +150°C
Gate Charge (Qg) Total Gate Charge 70 nC
Input Capacitance (Ciss) Input Capacitance at Vds = 400 V 1200 pF
Output Capacitance (Coss) Output Capacitance at Vds = 400 V 350 pF
Reverse Transfer Capacitance (Crss) Reverse Transfer Capacitance at Vds = 400 V 250 pF
On-State Resistance (Rds(on)) Drain-Source On-State Resistance at Vgs = 10 V 0.5 Ω

Instructions for Use

  1. Handling Precautions:

    • ESD Protection: Handle the device with ESD-protected equipment to avoid damage.
    • Temperature Management: Ensure that the operating temperature does not exceed the specified range to prevent thermal runaway.
  2. Mounting:

    • Heatsinking: Proper heatsinking is essential to manage power dissipation and maintain junction temperature within limits.
    • Torque Specifications: Follow the recommended torque values for mounting screws to avoid mechanical stress.
  3. Electrical Connections:

    • Gate Drive: Use a low-inductance gate drive circuit to minimize switching losses and prevent oscillations.
    • Drain and Source: Ensure that the drain and source connections are short and direct to reduce parasitic inductance.
  4. Operating Conditions:

    • Voltage and Current Limits: Do not exceed the maximum ratings for Vds, Vgs, and Id to avoid device failure.
    • Pulse Operation: For pulse applications, ensure that the pulse duration and frequency do not exceed the rated values to prevent overheating.
  5. Storage:

    • Environmental Conditions: Store the device in a dry, cool environment within the specified storage temperature range.
    • Packaging: Keep the device in its original packaging until ready for use to protect against physical damage and ESD.
  6. Testing:

    • Initial Testing: Perform initial testing under controlled conditions to verify proper operation before integrating into the final application.
    • Regular Inspection: Regularly inspect the device for signs of wear or damage, especially in high-reliability applications.
  7. Disposal:

    • Recycling: Dispose of the device in accordance with local environmental regulations and recycling guidelines.
(For reference only)

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