Specifications
SKU: 11249219
Parameter | Description | Value |
---|---|---|
Part Number | Component Identifier | PUMZ1 |
Type | Device Type | MOSFET |
Package | Physical Enclosure | TO-220 |
Drain-Source Voltage (Vds) | Maximum Voltage between Drain and Source | 600 V |
Gate-Source Voltage (Vgs) | Maximum Voltage between Gate and Source | ±20 V |
Continuous Drain Current (Id) | Maximum Continuous Current through Drain | 15 A |
Pulse Drain Current (Idm) | Maximum Pulse Current through Drain | 80 A |
Power Dissipation (Ptot) | Maximum Power Dissipation | 125 W |
Junction Temperature (Tj) | Operating Temperature Range | -55°C to +175°C |
Storage Temperature (Tstg) | Storage Temperature Range | -65°C to +150°C |
Gate Charge (Qg) | Total Gate Charge | 70 nC |
Input Capacitance (Ciss) | Input Capacitance at Vds = 400 V | 1200 pF |
Output Capacitance (Coss) | Output Capacitance at Vds = 400 V | 350 pF |
Reverse Transfer Capacitance (Crss) | Reverse Transfer Capacitance at Vds = 400 V | 250 pF |
On-State Resistance (Rds(on)) | Drain-Source On-State Resistance at Vgs = 10 V | 0.5 Ω |
Instructions for Use
Handling Precautions:
- ESD Protection: Handle the device with ESD-protected equipment to avoid damage.
- Temperature Management: Ensure that the operating temperature does not exceed the specified range to prevent thermal runaway.
Mounting:
- Heatsinking: Proper heatsinking is essential to manage power dissipation and maintain junction temperature within limits.
- Torque Specifications: Follow the recommended torque values for mounting screws to avoid mechanical stress.
Electrical Connections:
- Gate Drive: Use a low-inductance gate drive circuit to minimize switching losses and prevent oscillations.
- Drain and Source: Ensure that the drain and source connections are short and direct to reduce parasitic inductance.
Operating Conditions:
- Voltage and Current Limits: Do not exceed the maximum ratings for Vds, Vgs, and Id to avoid device failure.
- Pulse Operation: For pulse applications, ensure that the pulse duration and frequency do not exceed the rated values to prevent overheating.
Storage:
- Environmental Conditions: Store the device in a dry, cool environment within the specified storage temperature range.
- Packaging: Keep the device in its original packaging until ready for use to protect against physical damage and ESD.
Testing:
- Initial Testing: Perform initial testing under controlled conditions to verify proper operation before integrating into the final application.
- Regular Inspection: Regularly inspect the device for signs of wear or damage, especially in high-reliability applications.
Disposal:
- Recycling: Dispose of the device in accordance with local environmental regulations and recycling guidelines.
Inquiry - PUMZ1