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MMBF170

Specifications

SKU: 11249301

BUY MMBF170 https://www.utsource.net/itm/p/11249301.html

Parameter Symbol Min Typ Max Unit Description
Collector-Emitter Voltage VCEO - - 30 V Maximum voltage between collector and emitter with the base open.
Emitter-Collector Voltage VECC - - 30 V Maximum voltage between emitter and collector with the base open.
Base-Emitter Voltage VBE - - 6 V Maximum voltage between base and emitter.
Collector Current IC - - 200 mA Maximum continuous collector current.
Base Current IB - - 20 mA Maximum continuous base current.
Power Dissipation PTOT - - 330 mW Maximum power dissipation at TA = 25°C.
Operating Temperature Range TA -40 - 150 °C Ambient temperature range.
Storage Temperature Range TSTG -65 - 150 °C Storage temperature range.
Thermal Resistance, Junction to Air RθJA - - 300 K/W Thermal resistance from junction to ambient air.

Instructions for Use:

  1. Handling Precautions:

    • Handle the MMBF170 with care to avoid static discharge, which can damage the device.
    • Use proper anti-static equipment such as wrist straps and grounded work surfaces.
  2. Mounting:

    • Ensure that the leads are not bent excessively close to the body of the transistor to prevent mechanical stress.
    • Soldering should be done quickly to avoid overheating the device. The maximum soldering temperature is 260°C for 10 seconds.
  3. Biasing:

    • Proper biasing is crucial to ensure the transistor operates within its safe operating area (SOA).
    • Use appropriate resistors to limit the base current and prevent excessive collector current.
  4. Heat Dissipation:

    • If the device is expected to dissipate significant power, consider using a heatsink to maintain the junction temperature within safe limits.
    • Ensure adequate ventilation or cooling if the device is used in a high-temperature environment.
  5. Storage:

    • Store the MMBF170 in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the devices in their original packaging until ready for use to protect them from static and physical damage.
  6. Testing:

    • Use a multimeter to test the continuity and resistance between the leads to verify the integrity of the device.
    • Follow the datasheet recommendations for testing parameters to avoid damaging the transistor.
  7. Circuit Design:

    • When designing circuits, refer to the absolute maximum ratings and typical operating conditions to ensure reliable operation.
    • Consider the thermal characteristics and power dissipation requirements of the circuit to prevent overheating and potential failure.
(For reference only)

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