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Specifications
SKU: 11252094
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -50 | 50 | V | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | ||
| Continuous Drain Current (TC = 25°C) | ID | 11 | A | |||
| Continuous Drain Current (TC = 100°C) | ID | 7.7 | A | |||
| Pulse Drain Current (tp = 10 μs, IGM = 250 mA) | ID(pulse) | 36 | A | |||
| Total Power Dissipation (TC = 25°C) | PTOT | 98 | W | |||
| Total Power Dissipation (TC = 100°C) | PTOT | 56 | W | |||
| Junction Temperature | TJ | -55 | 150 | °C | ||
| Storage Temperature | TSTG | -65 | 150 | °C | ||
| Thermal Resistance, Junction to Case | RθJC | 0.8 | °C/W | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62 | °C/W |
Instructions for Use:
Voltage Ratings:
- Ensure that the drain-source voltage (VDS) does not exceed 50V.
- The gate-source voltage (VGS) should be within ±20V.
Current Ratings:
- For continuous operation, the drain current (ID) should not exceed 11A at 25°C case temperature or 7.7A at 100°C case temperature.
- For pulse conditions (10 μs duration), the peak drain current can reach up to 36A.
Power Dissipation:
- The total power dissipation (PTOT) is 98W at 25°C case temperature and 56W at 100°C case temperature.
Temperature Limits:
- The junction temperature (TJ) must be kept between -55°C and 150°C.
- The storage temperature (TSTG) range is from -65°C to 150°C.
Thermal Management:
- Use appropriate heat sinks to manage the thermal resistance from the junction to the case (RθJC = 0.8°C/W) and from the junction to the ambient (RθJA = 62°C/W).
Handling and Storage:
- Store the device in a dry environment to prevent moisture damage.
- Handle with care to avoid mechanical stress and electrostatic discharge (ESD) damage.
Mounting:
- Ensure proper mounting to maintain thermal performance and electrical connections.
- Follow the recommended PCB layout and soldering guidelines provided by the manufacturer.
Inquiry - FDH45N50F
