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FDA16N50

Specifications

SKU: 11253390

BUY FDA16N50 https://www.utsource.net/itm/p/11253390.html

Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage VDS -50 - 50 V Maximum voltage between drain and source
Gate-Source Voltage VGS -20 - 20 V Maximum voltage between gate and source
Continuous Drain Current ID - 16 - A Continuous drain current at 25°C
Pulse Drain Current ID(pulse) - 48 - A Peak pulse drain current (tp = 10 ms)
Power Dissipation PD - - 100 W Maximum power dissipation
Junction Temperature TJ -55 - 150 °C Operating junction temperature range
Storage Temperature TSTG -55 - 150 °C Storage temperature range
Total Gate Charge QG - 120 - nC Total gate charge
Input Capacitance Ciss - 1300 - pF Input capacitance
Output Capacitance Coss - 350 - pF Output capacitance
Reverse Transfer Capacitance Crss - 120 - pF Reverse transfer capacitance

Instructions for Use:

  1. Voltage Ratings:

    • Ensure that the drain-source voltage (VDS) does not exceed ±50V.
    • The gate-source voltage (VGS) should be kept within ±20V to avoid damage.
  2. Current Handling:

    • The continuous drain current (ID) should not exceed 16A at 25°C ambient temperature.
    • For pulse conditions, the peak drain current (ID(pulse)) can reach up to 48A for a pulse duration of 10 ms.
  3. Power Dissipation:

    • The maximum power dissipation (PD) is 100W. Proper heat sinking is required to manage heat dissipation.
  4. Temperature Considerations:

    • The operating junction temperature (TJ) should be within -55°C to 150°C.
    • Store the device in an environment where the temperature ranges from -55°C to 150°C.
  5. Capacitance Parameters:

    • The input capacitance (Ciss) is approximately 1300 pF.
    • The output capacitance (Coss) is around 350 pF.
    • The reverse transfer capacitance (Crss) is about 120 pF.
  6. Handling and Mounting:

    • Handle the device with care to avoid mechanical stress.
    • Ensure proper mounting to maintain thermal performance and electrical connections.
  7. Gate Drive:

    • Apply appropriate gate drive signals to ensure reliable switching. The total gate charge (QG) is approximately 120 nC.
  8. Safety Precautions:

    • Follow all safety guidelines and regulations when handling and using the device.
    • Use appropriate protective equipment and grounding to prevent electrostatic discharge (ESD).
  9. Testing and Evaluation:

    • Before integrating the device into a circuit, perform thorough testing to ensure it meets the required specifications and performance criteria.
(For reference only)

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