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IRGS14C40L

Specifications

SKU: 11253410

BUY IRGS14C40L https://www.utsource.net/itm/p/11253410.html

Parameter Symbol Min Typical Max Unit Conditions
Collector-Emitter Voltage VCE - - 650 V
Gate-Source Voltage VGS -15 - 20 V
Continuous Collector Current IC - - 40 A TC = 25°C
Continuous Collector Current IC - - 32 A TC = 100°C
Pulse Collector Current ICM - - 80 A tp = 10 μs, IAS = 0.5 A
Power Dissipation PTOT - - 275 W TC = 25°C
Junction Temperature TJ - - 175 °C
Storage Temperature Range TSTG -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Handle the device with care to avoid mechanical stress.
    • Ensure proper heat sinking to manage thermal dissipation, especially during high current operations.
  2. Electrical Connections:

    • Connect the collector (C) to the load or power supply.
    • Connect the emitter (E) to ground or the return path of the circuit.
    • Apply the gate (G) voltage relative to the source (S) to control the device.
  3. Gate Drive:

    • Use a gate resistor to limit the current and reduce ringing.
    • Ensure the gate-source voltage (VGS) is within the specified range to prevent damage.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rating.
    • Use a heatsink with adequate thermal resistance to keep the device within safe operating limits.
  5. Overcurrent Protection:

    • Implement overcurrent protection to prevent damage from excessive collector current (IC).
  6. Storage and Operating Conditions:

    • Store the device in a dry environment within the specified storage temperature range.
    • Operate the device within the recommended operating conditions to ensure reliability and longevity.
  7. Pulse Operation:

    • For pulse operation, ensure the pulse duration (tp) and average current do not exceed the specified limits.
  8. Testing:

    • Perform initial testing at low power levels to verify correct operation before moving to higher power applications.
(For reference only)

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