Specifications
SKU: 11253410
Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 650 | V | |
Gate-Source Voltage | VGS | -15 | - | 20 | V | |
Continuous Collector Current | IC | - | - | 40 | A | TC = 25°C |
Continuous Collector Current | IC | - | - | 32 | A | TC = 100°C |
Pulse Collector Current | ICM | - | - | 80 | A | tp = 10 μs, IAS = 0.5 A |
Power Dissipation | PTOT | - | - | 275 | W | TC = 25°C |
Junction Temperature | TJ | - | - | 175 | °C | |
Storage Temperature Range | TSTG | -55 | - | 150 | °C |
Instructions for Use:
Mounting and Handling:
- Handle the device with care to avoid mechanical stress.
- Ensure proper heat sinking to manage thermal dissipation, especially during high current operations.
Electrical Connections:
- Connect the collector (C) to the load or power supply.
- Connect the emitter (E) to ground or the return path of the circuit.
- Apply the gate (G) voltage relative to the source (S) to control the device.
Gate Drive:
- Use a gate resistor to limit the current and reduce ringing.
- Ensure the gate-source voltage (VGS) is within the specified range to prevent damage.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed the maximum rating.
- Use a heatsink with adequate thermal resistance to keep the device within safe operating limits.
Overcurrent Protection:
- Implement overcurrent protection to prevent damage from excessive collector current (IC).
Storage and Operating Conditions:
- Store the device in a dry environment within the specified storage temperature range.
- Operate the device within the recommended operating conditions to ensure reliability and longevity.
Pulse Operation:
- For pulse operation, ensure the pulse duration (tp) and average current do not exceed the specified limits.
Testing:
- Perform initial testing at low power levels to verify correct operation before moving to higher power applications.
Inquiry - IRGS14C40L