Share:
Specifications
SKU: 11254569
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Maximum Drain-Source Voltage | VDS(max) | 800 | V | |
| Maximum Gate-Source Voltage | VGS(max) | ±20 | V | |
| Maximum Drain Current (Pulsed) | ID(max) | 11 | A | Pulse width ≤ 10 μs, IG = 4 A |
| Continuous Drain Current | ID(on) | 3.5 | A | VGS = 10 V, TC = 25°C |
| Continuous Drain Current (TC = 75°C) | ID(on) | 2.5 | A | VGS = 10 V, TC = 75°C |
| Power Dissipation (TC = 25°C) | PD | 65 | W | |
| Power Dissipation (TC = 75°C) | PD | 45 | W | |
| Junction to Ambient Thermal Resistance | RθJA | 62 | °C/W | |
| Junction to Case Thermal Resistance | RθJC | 1.5 | °C/W | |
| Total Gate Charge | QG | 47 | nC | VDS = 400 V, VGS = 10 V, ID = 5 A |
| Input Capacitance | Ciss | 1400 | pF | VDS = 400 V, f = 1 MHz |
| Output Capacitance | Coss | 90 | pF | VDS = 400 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | 150 | pF | VDS = 400 V, f = 1 MHz |
| Turn-On Delay Time | td(on) | 65 | ns | VGS = 10 V, ID = 5 A, RG = 10 Ω |
| Rise Time | tr | 45 | ns | VGS = 10 V, ID = 5 A, RG = 10 Ω |
| Turn-Off Delay Time | td(off) | 50 | ns | VGS = -10 V, ID = 5 A, RG = 10 Ω |
| Fall Time | tf | 35 | ns | VGS = -10 V, ID = 5 A, RG = 10 Ω |
| Storage Temperature Range | Tstg | -55 to 150 | °C |
Instructions for Use:
Handling Precautions:
- Handle the device with care to avoid mechanical damage.
- Use proper ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
Mounting:
- Ensure proper thermal management by using a heatsink or other cooling methods, especially when operating at high power levels.
- Mount the device on a flat, clean surface to ensure good thermal contact.
Biasing:
- Apply the gate-source voltage (VGS) carefully to avoid exceeding the maximum ratings.
- Use a gate resistor (RG) to control the switching speed and reduce ringing.
Operation:
- Do not exceed the maximum drain-source voltage (VDS(max)) or the maximum drain current (ID(max)).
- Monitor the junction temperature (TJ) to ensure it does not exceed the maximum allowable temperature.
Testing:
- When testing the device, use appropriate test equipment and follow safety guidelines.
- Verify the device parameters under the specified conditions to ensure reliable operation.
Storage:
- Store the device in a dry, cool place to prevent moisture damage.
- Keep the device in its original packaging until ready for use.
By following these instructions, you can ensure the reliable and efficient operation of the SPA11N80C3 MOSFET.
(For reference only)Inquiry - SPA11N80C3 11N80C3
