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Specifications
SKU: 11255537
| Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | - | 55 | - | V |
| Gate-Source Voltage | VGS | - | - | ±20 | - | V |
| Continuous Drain Current | ID | TC = 25°C | - | 45 | - | A |
| Continuous Drain Current | ID | TC = 75°C | - | 33 | - | A |
| Pulse Drain Current | IDpeak | tp = 10 ms, IG = 8 A | - | 110 | - | A |
| Total Power Dissipation | PTOT | TC = 25°C | - | 140 | - | W |
| Junction Temperature | TJ | - | - | - | 150 | °C |
| Storage Temperature Range | TSTG | - | -65 | - | 150 | °C |
| Thermal Resistance, Junction to Case | RθJC | - | - | 0.5 | - | °C/W |
| Gate Charge | QG | VGS = 10 V, ID = 11 A | - | 95 | - | nC |
| Input Capacitance | Ciss | VDS = 25 V, f = 1 MHz | - | 1440 | - | pF |
| Output Capacitance | Coss | VDS = 25 V, f = 1 MHz | - | 250 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = 25 V, ID = 11 A, f = 1 MHz | - | 120 | - | pF |
| Threshold Gate Voltage | VGS(th) | ID = 250 μA | 2.0 | 4.0 | 6.0 | V |
| On-State Resistance | RDS(on) | VGS = 10 V, ID = 11 A | - | 0.028 | - | Ω |
| Turn-On Delay Time | td(on) | VGS = 10 V, IG = 8 A, ID = 11 A | - | 32 | - | ns |
| Rise Time | tr | VGS = 10 V, IG = 8 A, ID = 11 A | - | 34 | - | ns |
| Turn-Off Delay Time | td(off) | VGS = 10 V, IG = 8 A, ID = 11 A | - | 17 | - | ns |
| Fall Time | tf | VGS = 10 V, IG = 8 A, ID = 11 A | - | 30 | - | ns |
Instructions for Use:
Handling Precautions:
- The IRF6215 is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection.
- Avoid exceeding the maximum ratings to prevent damage.
Mounting:
- Ensure good thermal management by using a heatsink if necessary, especially when operating at high power levels.
- Follow the recommended PCB layout guidelines to minimize parasitic inductances and improve performance.
Biasing:
- Apply the gate voltage (VGS) carefully to avoid exceeding the maximum gate-source voltage.
- Use a gate resistor to control the switching speed and reduce ringing.
Operation:
- Ensure that the drain-source voltage (VDS) does not exceed the maximum rating.
- Operate within the specified temperature range to maintain reliability and longevity.
Testing:
- When testing the device, use appropriate test conditions as specified in the parameter table to obtain accurate results.
- Verify the on-state resistance (RDS(on)) and other key parameters to ensure the device is functioning correctly.
Storage:
- Store the device in a dry, cool place away from direct sunlight and sources of heat.
- Keep the device in its original packaging until ready for use to protect against ESD.
By following these instructions, you can ensure optimal performance and reliability of the IRF6215 MOSFET.
(For reference only)Inquiry - IRF6215
