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IRFB7446G

Specifications

SKU: 11255542

BUY IRFB7446G https://www.utsource.net/itm/p/11255542.html

Parameter Symbol Min Typical Max Unit Conditions
Continuous Drain Current ID - 20 - A TC = 25°C, VGS = 10V
Pulsed Drain Current IDpeak - 110 - A tP = 10 μs, Duty Cycle = 1%
Gate-Source Voltage VGS -20 - 20 V -
Drain-Source Breakdown Voltage BVdss 55 - 60 V ID = 250 μA, IS = 0.5 mA
Gate-Source Leakage Current IGSS - - 100 nA VGS = ±20 V, TC = 25°C
Drain-Source On-State Resistance RDS(on) 4.5 - 5.5 VGS = 10 V, ID = 20 A, TC = 25°C
Gate Charge Qg - 128 - nC -
Input Capacitance Ciss - 1340 - pF VDS = 15 V, VGS = 0 V
Output Capacitance Coss - 190 - pF VDS = 15 V, VGS = 0 V
Reverse Transfer Capacitance Crss - 130 - pF VDS = 15 V, VGS = 0 V
Total Switching Energy ETS - 220 - nJ VDS = 12 V, ID = 20 A, f = 100 kHz
Thermal Resistance, Junction to Case RθJC - 0.4 - °C/W -
Operating Junction Temperature Range TJ -55 - 150 °C -

Instructions for Use:

  1. Handling and Storage:

    • Store in a dry, cool place.
    • Handle with care to avoid damage to the leads and body.
    • Use proper ESD (Electrostatic Discharge) precautions to prevent damage.
  2. Mounting:

    • Ensure good thermal management by using a heatsink if necessary.
    • Apply thermal paste between the device and heatsink for better heat dissipation.
    • Solder the device using recommended temperatures and times to avoid thermal shock.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified range to ensure reliable operation.
    • Avoid exceeding the maximum gate-source voltage (VGS) to prevent damage.
  4. Current Limiting:

    • Ensure that the continuous drain current (ID) does not exceed the maximum rating.
    • For pulsed applications, do not exceed the pulsed drain current (IDpeak) and observe the duty cycle limitations.
  5. Thermal Considerations:

    • Monitor the junction temperature (TJ) to ensure it stays within the operating range.
    • Use the thermal resistance (RθJC) to calculate the required heatsink size.
  6. Capacitance and Switching:

    • Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in your circuit design.
    • Minimize switching losses by optimizing the gate drive circuit and considering the total switching energy (ETS).
  7. Testing:

    • Test the device under controlled conditions to verify its performance.
    • Use appropriate test equipment and methods to measure parameters accurately.
  8. Safety:

    • Follow all safety guidelines and regulations when handling and testing the device.
    • Ensure proper grounding and isolation to prevent electrical hazards.
(For reference only)

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