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M5M51008CP-70H

Specifications

SKU: 11256802

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Parameter Description Value Unit
Device Type Non-Volatile Static RAM (NVSRAM) - -
Density Memory Density 1 Mbit -
Organization Memory Organization 128K x 8 -
Supply Voltage Operating Voltage Range 2.7 to 3.6 V
Standby Current Standby Current (Vcc = 3.0V, Ta = 25°C) 1.0 μA
Active Current Active Current (Vcc = 3.0V, Ta = 25°C) 10 mA
Access Time Access Time (tAA) 70 ns
Data Retention Data Retention Time 10 years
Operating Temperature Operating Temperature Range -40 to +85 °C
Package Type Package Type 24-SOIC -
Write Cycle Write Cycle Time (tWC) 5 ms
Write Enable Write Enable Pin Active Low -
Hold Time Data Hold Time (tDH) 0 ns
Setup Time Address Setup Time (tAS) 10 ns
Clock Frequency Maximum Clock Frequency 14.29 MHz
Endurance Write/Read Cycle Endurance 1,000,000 cycles
Storage Temperature Storage Temperature Range -65 to +150 °C

Instructions for Use:

  1. Power Supply:

    • Ensure the supply voltage is within the specified range of 2.7V to 3.6V.
    • Connect the Vcc pin to the power supply and GND pin to ground.
  2. Addressing:

    • Apply the desired address to the address lines (A0-A16) before the rising edge of the clock signal.
  3. Data Input/Output:

    • For read operations, data will be available on the data lines (D0-D7) after the access time (tAA).
    • For write operations, apply the data to the data lines (D0-D7) and set the write enable (WE) pin low.
  4. Clock Signal:

    • The device operates with a maximum clock frequency of 14.29 MHz. Ensure the clock signal is stable and within this range.
  5. Write Operation:

    • To perform a write operation, set the write enable (WE) pin low and maintain it low for at least the write cycle time (tWC) of 5 ms.
    • After the write cycle, return the WE pin to high to complete the write operation.
  6. Standby Mode:

    • To minimize power consumption, ensure that the device is in standby mode when not in use by setting the chip select (CS) pin high.
  7. Temperature Considerations:

    • Operate the device within the specified operating temperature range of -40°C to +85°C to ensure reliable performance.
    • Store the device within the storage temperature range of -65°C to +150°C to prevent damage.
  8. Handling:

    • Handle the device with care to avoid static discharge, which can damage the internal circuits.
    • Follow proper ESD (Electrostatic Discharge) precautions during handling and installation.
  9. Endurance and Data Retention:

    • The device is rated for up to 1,000,000 write/read cycles.
    • Data retention is guaranteed for up to 10 years under normal operating conditions.
(For reference only)

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