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2N5551

Specifications

SKU: 11258615

BUY 2N5551 https://www.utsource.net/itm/p/11258615.html

Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCEO - - 60 V
Collector-Base Voltage VCBO - - 75 V
Emitter-Base Voltage VEBO - - 6 V
Collector Current IC - - 150 mA
Base Current IB - - 5 mA
DC Current Gain hFE 100 300 600 -
Transition Frequency fT - 180 - MHz
Power Dissipation PD - - 625 mW
Storage Temperature Range TSTG -65 - 150 °C
Operating Temperature Range TA -65 - 150 °C

Instructions for Use:

  1. Handling:

    • Handle the 2N5551 with care to avoid static damage.
    • Use proper anti-static precautions when handling and soldering.
  2. Mounting:

    • Ensure the transistor is securely mounted to the PCB or heat sink if necessary.
    • Avoid excessive mechanical stress on the leads.
  3. Soldering:

    • Use a temperature-controlled soldering iron.
    • Solder quickly to minimize thermal stress on the device.
    • Do not exceed 300°C for more than 10 seconds.
  4. Biasing:

    • Ensure the base-emitter voltage (VBE) is within the specified range to avoid damage.
    • Use appropriate biasing circuits to maintain stable operation.
  5. Power Dissipation:

    • If the power dissipation exceeds 625 mW, use a heat sink to dissipate excess heat.
    • Calculate the junction temperature to ensure it remains within safe limits.
  6. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Keep in anti-static packaging to prevent damage.
  7. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the 2N5551.
    • Test the transistor in a controlled environment to avoid damage from overvoltage or overcurrent conditions.
(For reference only)

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