Specifications
SKU: 11258615
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 60 | V |
Collector-Base Voltage | VCBO | - | - | 75 | V |
Emitter-Base Voltage | VEBO | - | - | 6 | V |
Collector Current | IC | - | - | 150 | mA |
Base Current | IB | - | - | 5 | mA |
DC Current Gain | hFE | 100 | 300 | 600 | - |
Transition Frequency | fT | - | 180 | - | MHz |
Power Dissipation | PD | - | - | 625 | mW |
Storage Temperature Range | TSTG | -65 | - | 150 | °C |
Operating Temperature Range | TA | -65 | - | 150 | °C |
Instructions for Use:
Handling:
- Handle the 2N5551 with care to avoid static damage.
- Use proper anti-static precautions when handling and soldering.
Mounting:
- Ensure the transistor is securely mounted to the PCB or heat sink if necessary.
- Avoid excessive mechanical stress on the leads.
Soldering:
- Use a temperature-controlled soldering iron.
- Solder quickly to minimize thermal stress on the device.
- Do not exceed 300°C for more than 10 seconds.
Biasing:
- Ensure the base-emitter voltage (VBE) is within the specified range to avoid damage.
- Use appropriate biasing circuits to maintain stable operation.
Power Dissipation:
- If the power dissipation exceeds 625 mW, use a heat sink to dissipate excess heat.
- Calculate the junction temperature to ensure it remains within safe limits.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Keep in anti-static packaging to prevent damage.
Testing:
- Use a multimeter or transistor tester to verify the functionality of the 2N5551.
- Test the transistor in a controlled environment to avoid damage from overvoltage or overcurrent conditions.
Inquiry - 2N5551