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Specifications
SKU: 11261424
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Supply Voltage | VCC | Operating | 2.7 | - | 3.6 | V |
| Standby Current | ICC | VCC = 3V | - | 0.1 | 1 | μA |
| Active Current | ICC | VCC = 3V, Reading | 2 | 3 | 4 | mA |
| Programming Current | ICCP | VCC = 3V, Programming | 10 | 15 | 20 | mA |
| Erase Current | ICCE | VCC = 3V, Erasing | 10 | 15 | 20 | mA |
| Data Retention Time | 10 | - | - | Years | ||
| Operating Temperature | Toper | -40 | - | 85 | °C | |
| Storage Temperature | Tstg | -65 | - | 150 | °C | |
| Write Cycle Time | tWC | Page Program | 3 | - | - | ms |
| Sector Erase Time | tSE | Sector Erase | 50 | - | - | ms |
| Block Erase Time | tBE | Block Erase | 100 | - | - | ms |
| Chip Erase Time | tCE | Chip Erase | 200 | - | - | ms |
| Data Output Delay | tDO | After CS Low | 0 | 10 | 20 | ns |
| Data Input Setup Time | tDI | Before CS High | 5 | - | - | ns |
| Address Access Time | tAA | After CS Low | 0 | 10 | 20 | ns |
Instructions for Using AT45DB021D-SH
Power Supply:
- Ensure the supply voltage (VCC) is within the range of 2.7V to 3.6V.
- The device has low standby current (0.1μA typical) and moderate active current (3mA typical).
Initialization:
- Apply the supply voltage (VCC) and ground (GND).
- Set the chip select (CS) pin high to put the device in standby mode.
Reading Data:
- Pull the CS pin low to activate the device.
- Send the read command (0xD2) followed by the address of the data to be read.
- The data will be available on the data output lines after the specified data output delay (tDO).
Programming Data:
- Pull the CS pin low to activate the device.
- Send the page program command (0x82) followed by the address and data to be programmed.
- Wait for the write cycle time (tWC) before performing another operation.
Erasing Data:
- Sector Erase:
- Send the sector erase command (0x50) followed by the address of the sector to be erased.
- Wait for the sector erase time (tSE) before performing another operation.
- Block Erase:
- Send the block erase command (0x52) followed by the address of the block to be erased.
- Wait for the block erase time (tBE) before performing another operation.
- Chip Erase:
- Send the chip erase command (0xC7).
- Wait for the chip erase time (tCE) before performing another operation.
- Sector Erase:
Timing Considerations:
- Ensure all timing parameters are met, including data input setup time (tDI) and address access time (tAA).
Temperature Range:
- Operate the device within the specified operating temperature range (-40°C to 85°C) and store it within the storage temperature range (-65°C to 150°C).
Data Retention:
- The device guarantees data retention for at least 10 years under normal operating conditions.
Handling:
- Handle the device with care to avoid static discharge, which can damage the internal circuits.
By following these instructions, you can ensure reliable operation and longevity of the AT45DB021D-SH flash memory device.
(For reference only)Inquiry - AT45DB021D-SH
