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NMC27C64Q-200

Specifications

SKU: 11262146

BUY NMC27C64Q-200 https://www.utsource.net/itm/p/11262146.html

Parameter Description Value Unit
Device Type EPROM (Erasable Programmable Read-Only Memory) NMC27C64Q-200 -
Storage Capacity Total memory storage 64 Kbit -
Organization Memory organization 8K x 8 -
Voltage Supply (Vcc) Operating voltage range 4.5 to 5.5 V
Access Time Maximum access time 200 ns
Programming Voltage Voltage required for programming 12.5 V
Erase Time Typical erase time 10 s
Programming Time Typical programming time per byte 3 ms
Operating Temperature Range of temperatures for operation -40 to +85 °C
Storage Temperature Range of temperatures for storage -65 to +150 °C
Package Type Type of package DIP (Dual Inline Package) -
Number of Pins Number of pins on the package 28 -
Data Retention Minimum data retention time 10 years
Endurance Cycles Number of write/erase cycles 1,000 -

Instructions:

  1. Power Supply:

    • Ensure the device is powered within the specified voltage range (4.5V to 5.5V).
  2. Programming:

    • Apply the programming voltage (12.5V) to the Vpp pin.
    • Write data to the desired memory location using the appropriate address and data lines.
    • Each byte typically takes 3 milliseconds to program.
  3. Erase:

    • Apply the programming voltage (12.5V) to the Vpp pin.
    • Perform a chip erase by setting all address lines to high and applying the erase command.
    • The typical erase time is 10 seconds.
  4. Reading:

    • Apply the operating voltage (4.5V to 5.5V) to Vcc.
    • Set the address lines to the desired memory location.
    • Read the data from the data lines.
  5. Temperature Considerations:

    • Operate the device within the temperature range of -40°C to +85°C.
    • Store the device within the temperature range of -65°C to +150°C.
  6. Handling:

    • Handle the device with care to avoid static discharge.
    • Follow proper ESD (Electrostatic Discharge) precautions during handling and installation.
  7. Storage:

    • Store the device in a dry environment to prevent moisture damage.
  8. Endurance:

    • The device can withstand up to 1,000 write/erase cycles.
  9. Data Retention:

    • Data will be retained for at least 10 years under normal operating conditions.
(For reference only)

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