Specifications
SKU: 11262146
Parameter | Description | Value | Unit |
---|---|---|---|
Device Type | EPROM (Erasable Programmable Read-Only Memory) | NMC27C64Q-200 | - |
Storage Capacity | Total memory storage | 64 Kbit | - |
Organization | Memory organization | 8K x 8 | - |
Voltage Supply (Vcc) | Operating voltage range | 4.5 to 5.5 | V |
Access Time | Maximum access time | 200 | ns |
Programming Voltage | Voltage required for programming | 12.5 | V |
Erase Time | Typical erase time | 10 | s |
Programming Time | Typical programming time per byte | 3 | ms |
Operating Temperature | Range of temperatures for operation | -40 to +85 | °C |
Storage Temperature | Range of temperatures for storage | -65 to +150 | °C |
Package Type | Type of package | DIP (Dual Inline Package) | - |
Number of Pins | Number of pins on the package | 28 | - |
Data Retention | Minimum data retention time | 10 | years |
Endurance Cycles | Number of write/erase cycles | 1,000 | - |
Instructions:
Power Supply:
- Ensure the device is powered within the specified voltage range (4.5V to 5.5V).
Programming:
- Apply the programming voltage (12.5V) to the Vpp pin.
- Write data to the desired memory location using the appropriate address and data lines.
- Each byte typically takes 3 milliseconds to program.
Erase:
- Apply the programming voltage (12.5V) to the Vpp pin.
- Perform a chip erase by setting all address lines to high and applying the erase command.
- The typical erase time is 10 seconds.
Reading:
- Apply the operating voltage (4.5V to 5.5V) to Vcc.
- Set the address lines to the desired memory location.
- Read the data from the data lines.
Temperature Considerations:
- Operate the device within the temperature range of -40°C to +85°C.
- Store the device within the temperature range of -65°C to +150°C.
Handling:
- Handle the device with care to avoid static discharge.
- Follow proper ESD (Electrostatic Discharge) precautions during handling and installation.
Storage:
- Store the device in a dry environment to prevent moisture damage.
Endurance:
- The device can withstand up to 1,000 write/erase cycles.
Data Retention:
- Data will be retained for at least 10 years under normal operating conditions.
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