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TC58NVG3S0FTA00

Specifications

SKU: 11263954

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Parameter Description Value
Device Type 8Gb (1Gx8) NAND Flash Memory -
Package WSON-16 (12x16x1.0mm) -
Operating Voltage (Vcc) Supply Voltage 2.7 V to 3.6 V
Interface Toggle Mode 2.0 -
Data I/O Data Input/Output Pins 8-bit
Access Time (tR) Read Access Time 40 ns (max)
Page Size Page Size for Read/Write Operations 2 KB (2048 bytes)
Block Size Block Size for Erase Operations 256 KB (262144 bytes)
Die Size Number of Dies per Package 1 Die
Endurance Program/Erase Cycles 10,000 cycles (min)
Retention Data Retention at 25°C 10 years (min)
Temperature Range Operating Temperature -40°C to +85°C
Storage Temperature Non-Operating Temperature -40°C to +125°C
Operating Humidity Relative Humidity 5% to 95% (non-condensing)
Programming Time Typical Programming Time per Page 200 μs (max)
Erase Time Typical Erase Time per Block 2 ms (max)
Standby Current (Icc) Standby Current (Vcc = 3.3V) 100 μA (max)
Active Current (Icc) Active Current (Vcc = 3.3V) 20 mA (max)

Instructions for Use

  1. Power Supply:

    • Ensure that the supply voltage (Vcc) is within the specified range of 2.7 V to 3.6 V.
    • Connect the ground (GND) pin to a stable reference ground.
  2. Signal Levels:

    • All input signals should be TTL-compatible.
    • Output signals are also TTL-compatible.
  3. Initialization:

    • After power-up, the device will automatically initialize. No specific initialization sequence is required.
  4. Command Sequence:

    • Commands are sent to the device using the command interface. Refer to the device datasheet for specific command codes and sequences.
    • Common commands include Read, Write, Erase, and Status Read.
  5. Read Operation:

    • To read data from the device, send the appropriate read command followed by the address.
    • Data will be output on the data lines (DQ0-DQ7).
  6. Write Operation:

    • To write data to the device, send the appropriate write command followed by the address and data.
    • Ensure that the device is not busy before initiating a write operation.
  7. Erase Operation:

    • To erase a block, send the appropriate erase command followed by the block address.
    • The erase operation may take up to 2 ms to complete.
  8. Status Check:

    • Use the status read command to check the status of the device, including whether it is busy or if an error has occurred.
  9. Handling:

    • Handle the device with care to avoid static damage.
    • Store the device in a dry, non-conductive environment when not in use.
  10. Environmental Considerations:

    • Operate the device within the specified temperature and humidity ranges to ensure reliable performance.
    • Avoid exposing the device to extreme temperatures or humidity levels.

For detailed information and specific command sequences, refer to the device datasheet provided by the manufacturer.

(For reference only)

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