BUY BTS5215L https://www.utsource.net/itm/p/11264516.html

The BTS5215L is a N-channel enhancement mode power MOSFET produced by Infineon Technologies. It is designed for use in a wide range of applications, including power switching, motor control, and power management. Description: The BTS5215L is a N-channel enhancement mode power MOSFET with a maximum drain-source voltage of 500V and a continuous drain current of 15A. It has a low on-resistance of 0.0045 ohms and a low gate charge of 4.5nC. The device is housed in a DSO-12 package, which is a surface-mount package with 12 pins. Features: rn Maximum drain-source voltage of 500V rn Continuous drain current of 15A rn Low on-resistance of 0.0045 ohms rn Low gate charge of 4.5nC rn Housed in a DSO-12 package Applications: The BTS5215L is suitable for use in a wide range of applications, including power switching, motor control, and power management. It can be used in automotive, industrial, and consumer electronics applications. (For reference only)