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Specifications
SKU: 11266031
| Parameter | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| Maximum Drain-Source Voltage | VDS(max) | 900 | V | - |
| Maximum Gate-Source Voltage | VGS(max) | ±20 | V | - |
| Maximum Drain Current (Pulsed) | ID(max) | 7.0 | A | Tj = 25°C, Pulse Width ≤ 10 μs, Duty Cycle ≤ 1% |
| Maximum Drain Current (Continuous) | ID(max) | 4.5 | A | TC = 25°C |
| Maximum Power Dissipation | PD(max) | 210 | W | TC = 25°C |
| Junction Temperature | Tj(op) | -55 to +175 | °C | - |
| Storage Temperature | Tstg | -65 to +150 | °C | - |
| Thermal Resistance, Junction to Case | RθJC | 0.83 | K/W | - |
| Total Gate Charge | QG | 125 | nC | VGS = 15 V, ID = 4.5 A |
| Input Capacitance | Ciss | 2500 | pF | VDS = 500 V, f = 1 MHz |
| Output Capacitance | Coss | 220 | pF | VDS = 500 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | 300 | pF | VDS = 500 V, f = 1 MHz |
| Threshold Voltage | VGS(th) | 2.0 to 4.0 | V | ID = 250 μA, Tj = 25°C |
| On-State Resistance | RDS(on) | 0.75 | Ω | VGS = 10 V, ID = 4.5 A, Tj = 25°C |
| Leakage Current | IDSS | 10 | μA | VDS = 900 V, Tj = 25°C |
Instructions for Use:
Voltage Ratings:
- Ensure that the drain-source voltage (VDS) does not exceed 900 V.
- The gate-source voltage (VGS) should not exceed ±20 V.
Current Handling:
- For continuous operation, do not exceed 4.5 A at a case temperature of 25°C.
- For pulsed operation, the maximum current can be up to 7.0 A with a pulse width of ≤ 10 μs and a duty cycle of ≤ 1%.
Power Dissipation:
- The maximum power dissipation is 210 W at a case temperature of 25°C. Ensure adequate heat sinking to manage thermal resistance.
Temperature Considerations:
- Operate the device within the junction temperature range of -55°C to +175°C.
- Store the device within the storage temperature range of -65°C to +150°C.
Thermal Management:
- Use the thermal resistance value (RθJC = 0.83 K/W) to design appropriate cooling solutions to maintain the junction temperature within safe limits.
Capacitance and Charge:
- Consider the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) when designing the gate drive circuitry.
Threshold Voltage:
- The threshold voltage (VGS(th)) ranges from 2.0 to 4.0 V. Ensure that the gate drive voltage is sufficient to fully turn on the MOSFET.
On-State Resistance:
- The on-state resistance (RDS(on)) is 0.75 Ω at a gate-source voltage of 10 V and a drain current of 4.5 A. This value will increase with temperature.
Leakage Current:
- The leakage current (IDSS) is 10 μA at a drain-source voltage of 900 V and a junction temperature of 25°C. Higher temperatures will increase this leakage.
Handling Precautions:
- Handle the device with care to avoid static discharge, which can damage the gate oxide.
- Follow proper soldering techniques to avoid thermal shock and mechanical stress.
Storage and Packaging:
- Store the device in a dry, cool place to prevent moisture damage.
- Use anti-static packaging materials to protect the device during transport and storage.
Inquiry - FMH07N90E
