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Specifications
SKU: 11269806
| Parameter | Description | Value |
|---|---|---|
| Part Number | Full part number | MT41K512M8RH-125IT:E |
| Type | Memory Type | DDR3 SDRAM |
| Density | Total Memory Density | 512 Mbit |
| Organization | Data Width / Banks / Row Address / Column Address | 8 bit x 8 banks x 14 bits x 10 bits |
| Voltage (Vdd, Vddq) | Supply Voltage | 1.35V ± 0.13V |
| Operating Temperature | Operating Temperature Range | -40°C to +125°C |
| Package | Package Type | BGA (Ball Grid Array) |
| Pin Count | Number of Pins | 78 |
| Speed Grade | Data Rate | 1600 Mbps |
| CAS Latency (CL) | CAS Latency | 11 |
| tRCD | RAS to CAS Delay | 11 ns |
| tRP | Row Precharge Time | 11 ns |
| tRAS | Active to Precharge Delay | 35 ns |
| tRC | Row Cycle Time | 46 ns |
| tRRD | Row Active to Row Active Delay | 10 ns |
| tRFC | Refresh Cycle Time | 64 ns |
| tFAW | Four Activate Window | 40 ns |
| tZQCS | ZQ Calibration Short | 64 ns |
| tZQCL | ZQ Calibration Long | 512 ns |
| tWTR | Write to Read Delay | 4 ns |
| tRTW | Read to Write Delay | 4 ns |
| tWR | Write Recovery Time | 15 ns |
| tRTP | Read to Precharge Delay | 7.5 ns |
| tCCD | Command to Command Delay | 4 ns |
| tCKE | CKE Pulse Width | 1.5 ns |
| tXSR | Exit Self-Refresh to Active Command | 128 ns |
| tXP | Exit Power Down to Active Command | 128 ns |
| tPD | Power Down Exit Time | 128 ns |
| tRFC2 | Auto-Refresh to Command Delay | 64 ns |
| tRFC4 | Four Auto-Refresh to Command Delay | 192 ns |
| tMOD | Mode Register Set to Command Delay | 128 ns |
Instructions for Use:
Power Supply:
- Ensure that the supply voltage (Vdd, Vddq) is within the specified range of 1.35V ± 0.13V.
- Use appropriate decoupling capacitors to stabilize the power supply.
Temperature:
- Operate the device within the temperature range of -40°C to +125°C to ensure reliable performance.
Signal Integrity:
- Use controlled impedance traces for all high-speed signals to minimize reflections and crosstalk.
- Terminate differential pairs properly to avoid signal degradation.
Initialization:
- After power-up, perform a reset sequence followed by mode register settings.
- Configure the device using the Mode Register Set (MRS) command to set parameters such as CAS latency, burst length, and DLL reset.
Memory Operations:
- Use the Active, Read, Write, and Precharge commands to manage memory operations.
- Ensure that timing parameters such as tRCD, tRP, tRAS, and tRC are respected to avoid data corruption.
Refresh:
- Perform auto-refresh or self-refresh operations to maintain data integrity.
- The refresh cycle time (tRFC) should be adhered to prevent data loss.
Power Management:
- Use power-down and self-refresh modes to reduce power consumption when the device is not actively being used.
- Properly exit these modes before resuming normal operation.
Testing and Debugging:
- Use built-in self-test (BIST) features and error detection mechanisms to verify the functionality of the device.
- Monitor device status through status registers and diagnostic outputs.
Handling:
- Handle the device with care to avoid static discharge and physical damage.
- Follow ESD (Electrostatic Discharge) precautions during handling and assembly.
Compliance:
- Ensure that the device complies with relevant standards and regulations for your application.
For detailed information and specific application notes, refer to the datasheet provided by Micron Technology.
(For reference only)Inquiry - MT41K512M8RH-125IT:E
