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AT25DF641-S3H-T

Specifications

SKU: 11269833

BUY AT25DF641-S3H-T https://www.utsource.net/itm/p/11269833.html

Parameter Symbol Min Typ Max Unit Description
Supply Voltage VCC 1.7 - 3.6 V Operating voltage range
Standby Current IS - 1 5 μA Current consumption in standby mode
Active Current (Read) IR 0.8 2 3 mA Current consumption during read operation
Active Current (Write) IW 1 3 5 mA Current consumption during write operation
Access Time tAC 0 0.2 0.7 μs Access time from chip enable to valid data output
Write Cycle Time tWC 5 - - ms Time required for a complete write cycle
Page Program Time tPP 3 - - ms Time required to program one page
Sector Erase Time tSE 30 - - ms Time required to erase one sector
Chip Erase Time tCE 120 - - ms Time required to erase the entire chip
Data Retention - - - 100 years Guaranteed data retention period
Operating Temperature TOP -40 - 85 °C Operating temperature range
Storage Temperature TST -65 - 150 °C Storage temperature range
Memory Size - - - 64 Mbit Total memory capacity
Page Size - - - 256 bytes Size of each programmable page
Sector Size - - - 4 Kbytes Size of each erasable sector
Number of Sectors - - - 128 - Total number of sectors in the chip
Package Type - - - - SOIC-8, TSSOP-8, WSON-8 Available package types
Operating Frequency fMAX - 70 - MHz Maximum operating frequency

Instructions for Use:

  1. Power Supply:

    • Ensure the supply voltage is within the specified range (1.7V to 3.6V).
    • Use appropriate decoupling capacitors near the power pins to minimize noise.
  2. Pin Configuration:

    • Connect the VCC pin to the positive supply and GND to the ground.
    • Configure the chip select (CS), write protect (WP), and hold (HOLD) pins as per your application requirements.
  3. Communication Protocol:

    • The AT25DF641-S3H-T supports SPI (Serial Peripheral Interface) communication.
    • Initialize the SPI interface with a clock speed up to 70 MHz.
    • Use the correct command codes for read, write, and erase operations.
  4. Data Operations:

    • Read Operation: Send the read command followed by the address to read data from the specified memory location.
    • Write Operation: Send the write enable command, then the write command followed by the address and data to be written.
    • Erase Operation: Send the write enable command, then the sector or chip erase command to erase the specified area.
  5. Timing Considerations:

    • Ensure that the access time (tAC) and write cycle time (tWC) are respected to avoid data corruption.
    • Use the status register to check the completion of write and erase operations.
  6. Environmental Conditions:

    • Operate the device within the specified temperature ranges to ensure reliable performance.
    • Store the device in a dry environment to prevent damage.
  7. Handling Precautions:

    • Handle the device with care to avoid static discharge.
    • Follow proper soldering techniques to ensure reliable connections.
  8. Documentation:

    • Refer to the datasheet for detailed command codes and timing diagrams.
    • Consult the application notes for specific use cases and advanced features.
(For reference only)

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