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2SA1507S

Specifications

SKU: 11270620

BUY 2SA1507S https://www.utsource.net/itm/p/11270620.html

Parameter Symbol Min Typ Max Unit Notes
Collector-Emitter Voltage VCE(O) - - 80 V
Emitter-Base Voltage VEB(O) - - 6 V
Collector Current IC - - 15 A
Base Current IB - - 5 A
Power Dissipation PT - - 130 W
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -55 - 150 °C
Transition Frequency fT - 2 - MHz
DC Current Gain hFE 20 70 200 -

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings to prevent damage to the transistor.
    • Use appropriate heat sinks when operating at high power levels to manage junction temperature.
  2. Mounting:

    • Ensure proper alignment of the transistor leads with the circuit board or socket.
    • Apply thermal compound between the transistor and heat sink for efficient heat dissipation.
  3. Biasing:

    • Set the base current (IB) to achieve the desired collector current (IC) based on the DC current gain (hFE).
    • Use a suitable biasing network to ensure stable operation over temperature variations.
  4. Testing:

    • Test the transistor in a controlled environment to verify its performance parameters.
    • Use a multimeter or transistor tester to check for continuity and gain.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight and extreme temperatures.
    • Handle with care to avoid mechanical damage.
  6. Soldering:

    • Use a soldering iron with a temperature no higher than 300°C to avoid damaging the transistor.
    • Ensure the soldering process is quick to minimize thermal stress.
  7. Application Notes:

    • The 2SA1507S is suitable for high-power amplification and switching applications.
    • Refer to the datasheet for detailed application circuits and design guidelines.
(For reference only)

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