Specifications
SKU: 11270620
Parameter | Symbol | Min | Typ | Max | Unit | Notes |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCE(O) | - | - | 80 | V | |
Emitter-Base Voltage | VEB(O) | - | - | 6 | V | |
Collector Current | IC | - | - | 15 | A | |
Base Current | IB | - | - | 5 | A | |
Power Dissipation | PT | - | - | 130 | W | |
Junction Temperature | TJ | -55 | - | 150 | °C | |
Storage Temperature | TSTG | -55 | - | 150 | °C | |
Transition Frequency | fT | - | 2 | - | MHz | |
DC Current Gain | hFE | 20 | 70 | 200 | - |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings to prevent damage to the transistor.
- Use appropriate heat sinks when operating at high power levels to manage junction temperature.
Mounting:
- Ensure proper alignment of the transistor leads with the circuit board or socket.
- Apply thermal compound between the transistor and heat sink for efficient heat dissipation.
Biasing:
- Set the base current (IB) to achieve the desired collector current (IC) based on the DC current gain (hFE).
- Use a suitable biasing network to ensure stable operation over temperature variations.
Testing:
- Test the transistor in a controlled environment to verify its performance parameters.
- Use a multimeter or transistor tester to check for continuity and gain.
Storage:
- Store in a dry, cool place away from direct sunlight and extreme temperatures.
- Handle with care to avoid mechanical damage.
Soldering:
- Use a soldering iron with a temperature no higher than 300°C to avoid damaging the transistor.
- Ensure the soldering process is quick to minimize thermal stress.
Application Notes:
- The 2SA1507S is suitable for high-power amplification and switching applications.
- Refer to the datasheet for detailed application circuits and design guidelines.
Inquiry - 2SA1507S