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Specifications
SKU: 11270758
| Parameter | Symbol | Min | Typical | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 500 | V | Tj = 25°C |
| Collector-Base Voltage | VCBO | - | - | 500 | V | Tj = 25°C |
| Emitter-Base Voltage | VEBO | - | - | 15 | V | Tj = 25°C |
| Continuous Collector Current | IC | - | - | 4 | A | TC = 25°C, Tj = 150°C |
| Continuous Collector Dissipation | Ptot | - | - | 125 | W | TC = 25°C |
| Junction Temperature | Tj | - | - | 150 | °C | - |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C | - |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.8 | 2.3 | 3.0 | V | IC = 4A, IB = 0.4A, Tj = 25°C |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.2 | 1.8 | 2.5 | V | IC = 4A, IB = 0.4A, Tj = 25°C |
| Turn-On Time | ton | - | 0.25 | 0.75 | μs | IC = 4A, VCC = 50V, RL = 10Ω, Tj = 25°C |
| Turn-Off Time | toff | - | 0.25 | 0.75 | μs | IC = 4A, VCC = 50V, RL = 10Ω, Tj = 25°C |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings listed in the table.
- Ensure proper heat sinking to manage the junction temperature, especially when operating at high power levels.
Mounting:
- Use a suitable heatsink to maintain the device within its thermal limits.
- Apply thermal compound between the device and the heatsink for better thermal conductivity.
Biasing:
- Ensure that the base-emitter voltage (VBE) and base current (IB) are set correctly to achieve the desired collector current (IC).
- Use a base resistor to limit the base current and prevent damage to the transistor.
Storage:
- Store the device in a dry, cool place within the storage temperature range specified.
- Handle with care to avoid mechanical damage.
Testing:
- Test the device under controlled conditions to ensure it meets the specified parameters.
- Use appropriate test equipment and methods to avoid overstressing the device.
Soldering:
- Solder the device quickly to avoid overheating the junction.
- Follow recommended soldering profiles to ensure reliable connections without damaging the device.
By following these instructions, you can ensure the reliable operation and longevity of the IRFU220NPBF and FU220N transistors.
(For reference only)Inquiry - IRFU220NPBF , FU220N
