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IRGP50B60PDPBF ,IRGP50B60PD

Specifications

SKU: 11270767

BUY IRGP50B60PDPBF ,IRGP50B60PD https://www.utsource.net/itm/p/11270767.html

Parameter IRGP50B60PDPBF IRGP50B60PD
Type Power MOSFET Power MOSFET
Package TO-247 TO-220
VDSS (V) 600 600
ID (A) 50 50
RDS(on) (Ω) 1.65 @ VGS=10V, ID=25A 1.65 @ VGS=10V, ID=25A
QG (nC) 130 130
QGD (nC) 34 34
fT (MHz) 2.4 2.4
Operating Temperature (°C) -55 to +150 -55 to +150
Storage Temperature (°C) -55 to +150 -55 to +150
Mounting Type Through-hole Through-hole

Instructions for Use:

  1. Handling Precautions:

    • ESD Protection: Both devices are sensitive to electrostatic discharge (ESD). Use proper ESD protection measures, such as wrist straps and grounded work surfaces.
    • Heat Sinking: Ensure adequate heat sinking to maintain operating temperatures within specified limits.
  2. Soldering:

    • Temperature: Use a soldering iron with a temperature of 350°C or less.
    • Time: Limit soldering time to 3 seconds per connection.
    • Cooling: Allow the device to cool naturally after soldering to avoid thermal shock.
  3. Biasing:

    • Gate Voltage: Apply a gate voltage (VGS) between 10V and 15V for optimal performance. Avoid exceeding the maximum gate-source voltage (VGSS).
    • Source Connection: Ensure a low-inductance path between the source terminal and the power supply ground to minimize parasitic oscillations.
  4. Thermal Management:

    • Thermal Resistance: The thermal resistance (RθJC) from junction to case is typically 0.5°C/W for the TO-247 package and 1.5°C/W for the TO-220 package. Use a heatsink with appropriate thermal conductivity to keep the junction temperature below 150°C.
    • Thermal Paste: Apply a thin layer of thermal paste between the device and the heatsink to improve thermal conductivity.
  5. Testing:

    • Initial Testing: Perform initial testing at low power levels to ensure correct operation before moving to full load conditions.
    • Parameter Verification: Verify key parameters such as VDSS, ID, and RDS(on) using a calibrated test setup.
  6. Storage:

    • Dry Storage: Store the devices in a dry environment to prevent moisture absorption, which can lead to damage during soldering.
    • Labeling: Clearly label the storage containers with part numbers and handling instructions to prevent mix-ups.

By following these guidelines, you can ensure reliable and efficient operation of the IRGP50B60PDPBF and IRGP50B60PD MOSFETs in your applications.

(For reference only)

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