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2SK1095,K1095

Specifications

SKU: 11271281

BUY 2SK1095,K1095 https://www.utsource.net/itm/p/11271281.html

Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage VDS - - 300 V Maximum drain-to-source voltage
Gate-Source Voltage VGS -10 - 10 V Maximum gate-to-source voltage
Continuous Drain Current ID - 8 10 A Maximum continuous drain current (at TC = 25°C)
Pulsed Drain Current ID pulsed - 16 20 A Maximum pulsed drain current (tp = 10 μs, fc ≤ 100 Hz)
Power Dissipation PD - - 120 W Maximum power dissipation (at TC = 25°C)
Junction Temperature TJ - - 175 °C Maximum junction temperature
Storage Temperature TSTG -55 - 150 °C Operating and storage temperature range
Input Capacitance Ciss - 240 - pF Input capacitance (at VDS = 250 V, f = 1 MHz)
Output Capacitance Coss - 50 - pF Output capacitance (at VDS = 250 V, f = 1 MHz)
Reverse Transfer Capacitance Crss - 15 - pF Reverse transfer capacitance (at VDS = 250 V, f = 1 MHz)
On-State Resistance RDS(on) - 0.5 0.7 Ω On-state resistance (at VGS = 10 V, ID = 8 A)
Gate Charge QG - 35 - nC Total gate charge (at VDS = 250 V, ID = 8 A)

Instructions for Use:

  1. Handling Precautions:

    • Handle the 2SK1095 with care to avoid damage to the pins and internal structure.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting:

    • Ensure that the mounting surface is flat and clean to ensure good thermal contact.
    • Use a suitable heat sink to manage the power dissipation and keep the junction temperature within safe limits.
  3. Biasing:

    • Apply the gate-source voltage (VGS) carefully to avoid exceeding the maximum ratings.
    • Ensure that the gate drive circuitry is capable of providing the required gate charge (QG) to turn the device on and off efficiently.
  4. Operation:

    • Monitor the drain current (ID) and power dissipation (PD) to prevent overheating.
    • Use appropriate snubber circuits if necessary to suppress voltage spikes during switching.
  5. Storage:

    • Store the 2SK1095 in a dry, cool place away from direct sunlight and sources of heat.
    • Follow the recommended storage temperature range to avoid damage.
  6. Testing:

    • Use a suitable test setup to verify the device parameters before integrating it into the final application.
    • Refer to the datasheet for detailed testing procedures and recommended test conditions.
  7. Safety:

    • Always follow safety guidelines when working with high voltages and currents.
    • Ensure that the device is properly insulated and grounded to prevent electrical hazards.
(For reference only)

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