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2SB709A-Q

Specifications

SKU: 11273409

BUY 2SB709A-Q https://www.utsource.net/itm/p/11273409.html
2SB709A-Q PNP transistors(BJT) -45V -100mA/-0.1A 80MHz 160~260 -500mV/-0.5V SOT-23/SC-59 marking BQ amplifier
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCE - - 60 V
Emitter-Base Voltage VEB -5.5 - 5.5 V
Collector Current IC - 3 5 A
Base Current IB - 0.3 1 A
Power Dissipation PT - - 100 W
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -65 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure that the mounting surface is flat and clean to ensure good thermal contact.
    • Use a suitable heatsink to dissipate heat effectively, especially when operating at high power levels.
  2. Biasing:

    • The base current (IB) should be set to provide the desired collector current (IC). Typically, IB should be around 1/10th of IC for saturation.
    • Ensure that the base-emitter voltage (VEB) does not exceed the maximum rating to avoid damage.
  3. Operating Conditions:

    • Keep the junction temperature (TJ) within the specified range to prevent thermal runaway and potential failure.
    • Monitor the power dissipation (PT) to ensure it does not exceed the maximum rating.
  4. Storage:

    • Store the device in a dry environment with temperatures within the storage temperature range (TSTG).
    • Avoid exposure to extreme humidity and corrosive environments.
  5. Handling:

    • Handle the device with care to avoid mechanical stress on the leads and body.
    • Use appropriate ESD protection measures to prevent damage from static electricity.
  6. Testing:

    • When testing the device, use a low current to initially verify functionality before applying full operational conditions.
    • Refer to the datasheet for specific test circuits and procedures.
(For reference only)

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