Specifications
SKU: 11273409
2SB709A-Q PNP transistors(BJT) -45V -100mA/-0.1A 80MHz 160~260 -500mV/-0.5V SOT-23/SC-59 marking BQ amplifier
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 60 | V |
Emitter-Base Voltage | VEB | -5.5 | - | 5.5 | V |
Collector Current | IC | - | 3 | 5 | A |
Base Current | IB | - | 0.3 | 1 | A |
Power Dissipation | PT | - | - | 100 | W |
Junction Temperature | TJ | -55 | - | 150 | °C |
Storage Temperature | TSTG | -65 | - | 150 | °C |
Instructions for Use:
Mounting:
- Ensure that the mounting surface is flat and clean to ensure good thermal contact.
- Use a suitable heatsink to dissipate heat effectively, especially when operating at high power levels.
Biasing:
- The base current (IB) should be set to provide the desired collector current (IC). Typically, IB should be around 1/10th of IC for saturation.
- Ensure that the base-emitter voltage (VEB) does not exceed the maximum rating to avoid damage.
Operating Conditions:
- Keep the junction temperature (TJ) within the specified range to prevent thermal runaway and potential failure.
- Monitor the power dissipation (PT) to ensure it does not exceed the maximum rating.
Storage:
- Store the device in a dry environment with temperatures within the storage temperature range (TSTG).
- Avoid exposure to extreme humidity and corrosive environments.
Handling:
- Handle the device with care to avoid mechanical stress on the leads and body.
- Use appropriate ESD protection measures to prevent damage from static electricity.
Testing:
- When testing the device, use a low current to initially verify functionality before applying full operational conditions.
- Refer to the datasheet for specific test circuits and procedures.
Inquiry - 2SB709A-Q