Share:


MMBT2222A-7-04-F

Specifications

SKU: 11274106

BUY MMBT2222A-7-04-F https://www.utsource.net/itm/p/11274106.html
MMBT2222A-7 NPN Transistors(BJT) 40V 600mA/0.6a 300Mhz 30~300 0.3V~1V SOT-23/SC-59 marking K1 medium power amplifier switch
Parameter Description Value Unit
Part Number Component Identifier MMBT2222A-7-04-F -
Type Component Type NPN Transistor -
Package Enclosure SOT-23 -
VCEO Collector-Emitter Voltage (Max) 40 V
VCBO Collector-Base Voltage (Max) 60 V
VEBO Emitter-Base Voltage (Max) 6 V
IC Collector Current (Continuous) 800 mA
IC (Pulse) Collector Current (Pulse) 1500 mA
PTOT Total Power Dissipation (Max) 315 mW
fT Transition Frequency 300 MHz
hFE DC Current Gain (Min/Typ) 100/300 -
VBE(sat) Base-Emitter Saturation Voltage 0.7 V
VCE(sat) Collector-Emitter Saturation Voltage 0.3 V
Storage Temperature Operating Temperature Range -65 to +150 °C
Operating Temperature Operating Temperature Range -65 to +150 °C

Instructions for Use:

  1. Handling: Handle the MMBT2222A-7-04-F with care to avoid static damage. Use appropriate ESD protection.
  2. Mounting: Ensure proper orientation and alignment during mounting. Follow the recommended soldering profile for SOT-23 packages.
  3. Power Dissipation: Do not exceed the maximum power dissipation rating. Consider heat sinking if operating near the maximum power limits.
  4. Voltage and Current Limits: Ensure that the applied voltages and currents do not exceed the maximum ratings to prevent damage to the transistor.
  5. Storage: Store in a dry, cool environment to prevent moisture damage.
  6. Testing: Use appropriate test equipment and methods to verify the functionality of the transistor. Refer to the datasheet for specific test conditions.
  7. Schematic Design: When designing circuits, ensure that the transistor is used within its specified parameters to achieve optimal performance and reliability.
(For reference only)

 Inquiry - MMBT2222A-7-04-F