Specifications
SKU: 11274106
MMBT2222A-7 NPN Transistors(BJT) 40V 600mA/0.6a 300Mhz 30~300 0.3V~1V SOT-23/SC-59 marking K1 medium power amplifier switch
Parameter | Description | Value | Unit |
---|---|---|---|
Part Number | Component Identifier | MMBT2222A-7-04-F | - |
Type | Component Type | NPN Transistor | - |
Package | Enclosure | SOT-23 | - |
VCEO | Collector-Emitter Voltage (Max) | 40 | V |
VCBO | Collector-Base Voltage (Max) | 60 | V |
VEBO | Emitter-Base Voltage (Max) | 6 | V |
IC | Collector Current (Continuous) | 800 | mA |
IC (Pulse) | Collector Current (Pulse) | 1500 | mA |
PTOT | Total Power Dissipation (Max) | 315 | mW |
fT | Transition Frequency | 300 | MHz |
hFE | DC Current Gain (Min/Typ) | 100/300 | - |
VBE(sat) | Base-Emitter Saturation Voltage | 0.7 | V |
VCE(sat) | Collector-Emitter Saturation Voltage | 0.3 | V |
Storage Temperature | Operating Temperature Range | -65 to +150 | °C |
Operating Temperature | Operating Temperature Range | -65 to +150 | °C |
Instructions for Use:
- Handling: Handle the MMBT2222A-7-04-F with care to avoid static damage. Use appropriate ESD protection.
- Mounting: Ensure proper orientation and alignment during mounting. Follow the recommended soldering profile for SOT-23 packages.
- Power Dissipation: Do not exceed the maximum power dissipation rating. Consider heat sinking if operating near the maximum power limits.
- Voltage and Current Limits: Ensure that the applied voltages and currents do not exceed the maximum ratings to prevent damage to the transistor.
- Storage: Store in a dry, cool environment to prevent moisture damage.
- Testing: Use appropriate test equipment and methods to verify the functionality of the transistor. Refer to the datasheet for specific test conditions.
- Schematic Design: When designing circuits, ensure that the transistor is used within its specified parameters to achieve optimal performance and reliability.
Inquiry - MMBT2222A-7-04-F