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2SB736A

Specifications

SKU: 11275611

BUY 2SB736A https://www.utsource.net/itm/p/11275611.html
2SB736A PNP transistors(BJT) -80V -300mA/-0.3A 100MHz 250~400 -600mV/-0.6V SOT-23/SC-59 marking B55 radio audio frequency amplifier
Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCEO - - 100 V IC = 5mA, IB = 0mA
Emitter-Base Voltage VEBO - - 5 V IE = 50mA
Collector Current IC - - 100 mA VCE = 1V
Base Current IB - - 10 mA VBE = 1V
DC Current Gain hFE 100 300 800 - IC = 10mA, VCE = 5V
Transition Frequency fT - 250 - MHz IC = 10mA, VCE = 5V
Storage Temperature TSTG -55 - 150 °C -
Operating Temperature TA -55 - 150 °C -

Instructions for Use:

  1. Handling: Handle the 2SB736A with care to avoid damage. Use appropriate anti-static measures.
  2. Mounting: Ensure proper heat sinking if operating at high power levels to maintain junction temperature within safe limits.
  3. Biasing: Bias the transistor correctly to ensure stable operation. Refer to the typical operating conditions for guidance.
  4. Storage: Store the device in a dry, cool place to prevent moisture damage.
  5. Testing: When testing, use recommended test conditions to avoid exceeding maximum ratings.
  6. Soldering: Solder the device quickly to avoid overheating. Recommended soldering temperature is 260°C for no more than 10 seconds.
  7. Application: The 2SB736A is suitable for general-purpose switching and amplification applications. Ensure that the application does not exceed the specified maximum ratings.
(For reference only)

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