Share:


2SC1622A

Specifications

SKU: 11275829

BUY 2SC1622A https://www.utsource.net/itm/p/11275829.html
2SC1622A NPN Transistors(BJT) 120V 50mA 110MHz 200~400 300mV/0.3V SOT-23/SC-59 marking D16 Audio frequency High gain amplifier
Parameter Symbol Min Typical Max Unit Conditions
Collector-Emitter Voltage VCE - - 40 V
Emitter-Base Voltage VEB -5.0 - - V
Collector-Base Voltage VCB - - 30 V
Collector Current IC - - 1.5 A
Base Current IB - - 0.15 A
Power Dissipation PT - - 35 W TA = 25°C
Operating Temperature TOP -55 - 150 °C
Storage Temperature TSTG -65 - 200 °C
Thermal Resistance RθJC - 1.5 - °C/W Junction to Case
Transition Frequency fT - 200 - MHz IC = 150mA, VCE = 10V
DC Current Gain hFE 30 100 300 - IC = 150mA, VCE = 10V

Instructions for Use:

  1. Handling Precautions:

    • Handle the 2SC1622A with care to avoid mechanical damage.
    • Avoid exposing the transistor to static electricity, which can cause permanent damage.
  2. Mounting:

    • Ensure proper heat sinking if the transistor will be operating near its maximum power dissipation.
    • Use a thermal compound between the transistor and the heat sink for better thermal conductivity.
  3. Biasing:

    • Ensure that the base current (IB) is sufficient to drive the collector current (IC) within the specified limits.
    • Use appropriate biasing circuits to maintain stable operation over temperature variations.
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table to prevent damage to the transistor.
    • Operate within the recommended operating conditions to ensure reliable performance.
  5. Storage:

    • Store the 2SC1622A in a dry, cool place away from direct sunlight and sources of heat.
    • Follow proper storage guidelines to maintain the integrity of the component.
(For reference only)

 Inquiry - 2SC1622A