Share:


2SC2295-B

Specifications

SKU: 11276433

BUY 2SC2295-B https://www.utsource.net/itm/p/11276433.html
2SC2295-B NPN Transistors(BJT) 30V 30mA 300MHz 70~140 100mV/0.1V SOT-23/SC-59 marking VB high-frequency amplifier
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 100 V
Collector-Base Voltage VCBO - - 120 V
Emitter-Base Voltage VEBO - - 6 V
Collector Current IC - - 3 A
Base Current IB - - 0.3 A
DC Current Gain hFE 30 100 300 -
Transition Frequency fT - - 100 MHz
Power Dissipation PT - - 65 W
Junction Temperature TJ -20 - 150 °C
Storage Temperature Range TSTG -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the transistor to temperatures outside its specified range.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting:

    • Ensure that the mounting surface is clean and flat.
    • Apply thermal paste between the transistor and the heatsink to improve heat dissipation.
    • Tighten the mounting screws to the recommended torque to avoid mechanical stress.
  3. Biasing:

    • Set the base current (IB) to ensure the transistor operates within its safe operating area (SOA).
    • Use a current-limiting resistor in series with the base to prevent excessive base current.
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Monitor the junction temperature (TJ) to ensure it remains within the specified limits.
  5. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
    • Perform initial tests at low power levels to ensure correct operation.
  6. Storage:

    • Store the transistor in a dry, cool place away from direct sunlight.
    • Keep the device in its original packaging until ready for use to protect against static damage.
(For reference only)

 Inquiry - 2SC2295-B