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Specifications
SKU: 11281146
2SD1664 NPN Transistors(BJT) 40V 1A 150MHz 180~390 150mV/0.15V SOT-89/SC-62/MPT3 marking DAR
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | - | - | - | 80 | V |
| Collector-Base Voltage | VCB | - | - | - | 80 | V |
| Emitter-Base Voltage | VEB | - | - | - | 5 | V |
| Collector Current | IC | - | - | - | 3 | A |
| Base Current | IB | - | - | - | 0.3 | A |
| Power Dissipation | PT | TA = 25°C | - | - | 65 | W |
| Junction Temperature | TJ | - | - | - | 150 | °C |
| Storage Temperature Range | TSTG | - | -65 | - | 150 | °C |
| Thermal Resistance, Junction to Case | RθJC | - | - | - | 1.5 | °C/W |
Instructions for Use:
- Mounting: Ensure proper heat sinking to maintain the junction temperature within the specified limits.
- Biasing: Carefully set the base current to avoid exceeding the maximum collector current.
- Operating Conditions: Do not exceed the maximum ratings for voltage, current, and power dissipation.
- Storage: Store the device in a dry environment within the specified storage temperature range.
- Handling: Use appropriate ESD (Electrostatic Discharge) precautions to prevent damage to the device.
- Testing: When testing the device, ensure that all test conditions are within the specified operating parameters to avoid premature failure.
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