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Specifications
SKU: 11281601
BF547W NPN Transistors(BJT) 30V 50mA 800-1600MHz 40~250 SOT-323/SC-70 marking E2 UHF and oscillator and IF amplifier ultra high frequency tuner
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | - | - | 50 | V | IC = 10 μA, T = 25°C |
| Emitter-Base Breakdown Voltage | V(BR)EBO | - | - | 6 | V | IE = 10 μA, T = 25°C |
| Collector-Base Breakdown Voltage | V(BR)CBO | - | - | 50 | V | IC = 10 μA, T = 25°C |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.1 | 0.3 | 0.6 | V | IC = 1 mA, IB = 100 μA, T = 25°C |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.6 | 0.7 | 0.8 | V | IC = 1 mA, IB = 100 μA, T = 25°C |
| Collector Current | IC | - | - | 100 | mA | T = 25°C |
| Base Current | IB | - | - | 10 | mA | T = 25°C |
| DC Current Gain | hFE | 100 | 300 | 800 | - | IC = 2 mA, VCE = 5 V, T = 25°C |
| Transition Frequency | fT | - | 150 | 300 | MHz | IC = 10 mA, VCE = 5 V, T = 25°C |
| Storage Temperature Range | Tstg | -65 | - | 150 | °C | - |
| Operating Junction Temperature | TJ | -65 | - | 150 | °C | - |
Instructions for Use:
- Biasing: Ensure that the base-emitter junction is forward-biased to allow current flow from the collector to the emitter. The base-emitter voltage (VBE) should be within the specified range.
- Saturation: To operate the transistor in saturation, the collector-emitter voltage (VCE) should be kept low, typically less than 0.6V, with appropriate base current (IB).
- Heat Dissipation: The BF547W can dissipate up to 625 mW at room temperature. Ensure adequate heat sinking if operating near maximum power dissipation.
- Reverse Polarity Protection: Avoid reverse biasing the collector-emitter or base-emitter junctions beyond their breakdown voltages to prevent damage.
- Temperature Considerations: The transistor is rated for operation over a wide temperature range (-65°C to 150°C). However, performance parameters may vary with temperature, so ensure the circuit design accounts for these variations.
- Storage: Store the transistor in a dry, cool place to avoid moisture damage. Handle with care to prevent static discharge which can damage the device.
- Soldering: Use a soldering iron with a temperature not exceeding 300°C and complete soldering within 10 seconds to avoid thermal damage.
- Testing: When testing the transistor, use a multimeter set to the diode test mode to check the base-emitter and base-collector junctions. A good transistor will show a forward voltage drop (typically around 0.6V) and an open circuit in reverse.
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