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Specifications
SKU: 11283756
2SC4570 NPN Transistors(BJT) 20V 30mA 5.5GHz 60~120 500mV/0.5V SOT-323/SC-70 marking T73
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 800 | V | IC = 50 mA |
| Collector-Base Voltage | VCBO | - | - | 900 | V | IB = 10 μA |
| Emitter-Base Voltage | VEBO | - | - | 6 | V | IE = 100 μA |
| Collector Current | IC | - | 50 | 300 | mA | VCE = 30 V |
| Base Current | IB | - | - | 10 | mA | VCE = 30 V |
| DC Current Gain | hFE | 100 | 200 | 400 | - | IC = 150 mA, VCE = 10 V |
| Transition Frequency | fT | - | 250 | - | MHz | IC = 150 mA, VCE = 10 V |
| Power Dissipation | PT | - | - | 1000 | mW | TA = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | - |
| Storage Temperature | TSTG | -55 | - | 150 | °C | - |
Instructions for Use:
Handling Precautions:
- Avoid exposing the transistor to temperatures exceeding its maximum junction temperature (TJ).
- Ensure that the collector-emitter voltage (VCEO) does not exceed 800V.
- Do not exceed the maximum power dissipation (PT) of 1000 mW.
Mounting:
- Use appropriate heat sinks if operating at high power levels to ensure proper thermal management.
- Ensure good electrical and mechanical connections to the circuit board.
Biasing:
- For optimal performance, bias the base current (IB) to achieve the desired collector current (IC) within the specified range.
- Use the DC current gain (hFE) to determine the required base current for a given collector current.
Storage:
- Store the transistor in a dry, cool place within the storage temperature range (-55°C to 150°C).
Testing:
- When testing the transistor, ensure that all voltages and currents are within the specified limits to avoid damage.
Applications:
- The 2SC4570 is suitable for a wide range of applications including audio amplifiers, switching circuits, and general-purpose amplification.
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