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2SD1615

Specifications

SKU: 11285021

BUY 2SD1615 https://www.utsource.net/itm/p/11285021.html
2SD1615 NPN Transistors(BJT) 60V 1A 160MHz 300~600 150mV/0.15V SOT-89 marking GK
Parameter Symbol Min Typ Max Unit Notes
Collector-Emitter Voltage VCEO - - 80 V -
Collector-Base Voltage VCBO - - 90 V -
Emitter-Base Voltage VEBO - - 7 V -
Collector Current IC - - 3 A -
Base Current IB - - 0.3 A -
Power Dissipation PT - - 65 W -
Junction Temperature TJ - - 150 °C -
Storage Temperature TSTG -55 - 150 °C -
Transition Frequency fT - 300 - MHz -
Continuous Collector Current (TA = 25°C) IC(TA) - 3 - A -
Continuous Collector Current (TC = 25°C) IC(TC) - 4 - A -

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Use recommended mounting torque for screws to avoid damage.
  2. Biasing:

    • Ensure base current is sufficient to keep the transistor in the desired operating region (saturation, active, or cutoff).
    • Use appropriate biasing circuits to stabilize the operating point.
  3. Power Dissipation:

    • Calculate power dissipation to ensure it does not exceed the maximum rating.
    • Consider derating for higher ambient temperatures.
  4. Storage and Handling:

    • Store in a dry, cool place away from direct sunlight.
    • Handle with care to avoid mechanical stress and static discharge.
  5. Testing:

    • Use appropriate test equipment and procedures to verify parameters.
    • Avoid exceeding maximum ratings during testing to prevent damage.
  6. Application:

    • Suitable for high-frequency switching and linear applications.
    • Check the datasheet for detailed application notes and circuit examples.
(For reference only)

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