Specifications
SKU: 11285021
2SD1615 NPN Transistors(BJT) 60V 1A 160MHz 300~600 150mV/0.15V SOT-89 marking GK
Parameter | Symbol | Min | Typ | Max | Unit | Notes |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 80 | V | - |
Collector-Base Voltage | VCBO | - | - | 90 | V | - |
Emitter-Base Voltage | VEBO | - | - | 7 | V | - |
Collector Current | IC | - | - | 3 | A | - |
Base Current | IB | - | - | 0.3 | A | - |
Power Dissipation | PT | - | - | 65 | W | - |
Junction Temperature | TJ | - | - | 150 | °C | - |
Storage Temperature | TSTG | -55 | - | 150 | °C | - |
Transition Frequency | fT | - | 300 | - | MHz | - |
Continuous Collector Current (TA = 25°C) | IC(TA) | - | 3 | - | A | - |
Continuous Collector Current (TC = 25°C) | IC(TC) | - | 4 | - | A | - |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use recommended mounting torque for screws to avoid damage.
Biasing:
- Ensure base current is sufficient to keep the transistor in the desired operating region (saturation, active, or cutoff).
- Use appropriate biasing circuits to stabilize the operating point.
Power Dissipation:
- Calculate power dissipation to ensure it does not exceed the maximum rating.
- Consider derating for higher ambient temperatures.
Storage and Handling:
- Store in a dry, cool place away from direct sunlight.
- Handle with care to avoid mechanical stress and static discharge.
Testing:
- Use appropriate test equipment and procedures to verify parameters.
- Avoid exceeding maximum ratings during testing to prevent damage.
Application:
- Suitable for high-frequency switching and linear applications.
- Check the datasheet for detailed application notes and circuit examples.
Inquiry - 2SD1615