Specifications
SKU: 11286501
FDG313N MOSFET N-Channel 25V 950mA/0.95A SOT-363/SC70-6/TSSOP6/SC-88 marking 13 low on-resistance/ultra highspeed switch/4Vdriver
Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | Continuous | - | - | 30 | V |
Gate-Source Voltage | VGS | Continuous | -10 | - | 10 | V |
Continuous Drain Current | ID | TC = 25°C | - | 3.13 | - | A |
Power Dissipation | PD | TC = 25°C | - | - | 2.25 | W |
Junction Temperature | TJ | - | - | - | 150 | °C |
Storage Temperature | TSTG | - | -55 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- The FDG313N is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling.
- Avoid exceeding the maximum ratings specified in the table to prevent damage to the device.
Mounting:
- Ensure that the device is mounted on a suitable heatsink if operating at high power levels to maintain junction temperature within safe limits.
- Follow recommended soldering profiles to avoid thermal shock and ensure reliable connections.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to control the drain current (ID).
- Ensure that the gate is properly biased to avoid unintended conduction or cutoff states.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed 150°C.
- Use thermal vias and appropriate PCB layout techniques to enhance heat dissipation.
Storage:
- Store the device in a dry, cool environment within the storage temperature range (-55°C to 150°C).
Testing:
- When testing the device, use appropriate test equipment and follow safety guidelines to prevent damage to the device or injury to personnel.
Application Notes:
- Refer to the datasheet and application notes for detailed information on specific applications and circuit design considerations.
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