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FDG313N

Specifications

SKU: 11286501

BUY FDG313N https://www.utsource.net/itm/p/11286501.html
FDG313N MOSFET N-Channel 25V 950mA/0.95A SOT-363/SC70-6/TSSOP6/SC-88 marking 13 low on-resistance/ultra highspeed switch/4Vdriver
Parameter Symbol Conditions Min Typ Max Unit
Drain-Source Voltage VDS Continuous - - 30 V
Gate-Source Voltage VGS Continuous -10 - 10 V
Continuous Drain Current ID TC = 25°C - 3.13 - A
Power Dissipation PD TC = 25°C - - 2.25 W
Junction Temperature TJ - - - 150 °C
Storage Temperature TSTG - -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • The FDG313N is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling.
    • Avoid exceeding the maximum ratings specified in the table to prevent damage to the device.
  2. Mounting:

    • Ensure that the device is mounted on a suitable heatsink if operating at high power levels to maintain junction temperature within safe limits.
    • Follow recommended soldering profiles to avoid thermal shock and ensure reliable connections.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified range to control the drain current (ID).
    • Ensure that the gate is properly biased to avoid unintended conduction or cutoff states.
  4. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it does not exceed 150°C.
    • Use thermal vias and appropriate PCB layout techniques to enhance heat dissipation.
  5. Storage:

    • Store the device in a dry, cool environment within the storage temperature range (-55°C to 150°C).
  6. Testing:

    • When testing the device, use appropriate test equipment and follow safety guidelines to prevent damage to the device or injury to personnel.
  7. Application Notes:

    • Refer to the datasheet and application notes for detailed information on specific applications and circuit design considerations.
(For reference only)

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