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FDN360P

Specifications

SKU: 11286502

BUY FDN360P https://www.utsource.net/itm/p/11286502.html
FDN360P MOSFET P-Channel -30V -2A 0.060ohm SOT-23 marking 360
Parameter Symbol Test Conditions Min Typical Max Unit
Drain-Source Voltage VDS -30 0 V
Gate-Source Voltage VGS -20 0 V
Continuous Drain Current ID VDS = -30V, TA = 25°C 150 mA
Gate Leakage Current IGSS VGS = ±20V, TA = 25°C 100 nA
Drain-Source On-State Resistance RDS(on) VGS = -4.5V, ID = -150mA, TA = 25°C 5.5 Ω
Gate-Threshold Voltage VGS(th) ID = -1mA, TA = 25°C -4.0 -2.0 -1.0 V
Total Power Dissipation PTOT TC = 25°C 350 mW
Junction Temperature TJ 150 °C
Storage Temperature Range TSTG -65 150 °C

Instructions for Using FDN360P:

  1. Handling Precautions:

    • The FDN360P is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling and installation.
    • Avoid exposing the device to temperatures outside its specified operating range.
  2. Mounting:

    • Ensure that the device is mounted on a suitable heat sink if it will be operated at high power levels.
    • Follow recommended soldering profiles to avoid thermal damage during assembly.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified limits to prevent damage to the device.
    • Ensure that the drain-source voltage (VDS) does not exceed the maximum rating.
  4. Operation:

    • Monitor the drain current (ID) to ensure it remains within the continuous drain current limit.
    • Check the junction temperature (TJ) to ensure it does not exceed the maximum allowable value.
  5. Testing:

    • Use the test conditions provided in the parameter table to verify the performance of the device.
    • Measure the gate leakage current (IGSS) and drain-source on-state resistance (RDS(on)) to ensure they meet the specified values.
  6. Storage:

    • Store the device in a dry, cool environment within the storage temperature range to maintain its reliability.
  7. Applications:

    • The FDN360P is suitable for applications such as signal switching, load driving, and low-side switching in consumer electronics, automotive, and industrial systems.
(For reference only)

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