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SS1H10

Specifications

SKU: 11286749

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SS1H10 SBD Schottky Barrier Diodes 100V 1A 770mV/0.77V SMA/DO-214AC marking S10 low forward voltage
Parameter Description Value
Part Number Full part number SS1H10
Type Type of device Schottky Diode
Package Package type DO-214AC (SMA)
Max Forward Voltage (Vf) Maximum forward voltage at rated current 1.0V
Reverse Recovery Time (trr) Reverse recovery time 50 ns
Peak Forward Current (Ifsm) Peak forward surge current (8.3 ms single half sine wave) 10A
Continuous Forward Current (If) Continuous forward current (at 25°C) 1A
Maximum Reverse Voltage (Vr) Maximum reverse voltage 100V
Power Dissipation (Pd) Power dissipation (at 25°C) 0.6W
Operating Temperature Range (Tj) Operating junction temperature range -65°C to +150°C
Storage Temperature Range (Ts) Storage temperature range -65°C to +150°C
Thermal Resistance (Rth) Thermal resistance (junction to ambient) 175°C/W

Instructions for Use:

  1. Mounting:

    • Ensure the diode is mounted with adequate clearance from other components to allow for proper heat dissipation.
    • Use a heat sink if the diode will be operating near its maximum power dissipation.
  2. Handling:

    • Handle the diode by the body, not the leads, to avoid damage.
    • Avoid exposing the diode to excessive static electricity.
  3. Soldering:

    • Solder the diode at a temperature not exceeding 260°C for a duration of 10 seconds.
    • Allow the diode to cool naturally after soldering.
  4. Circuit Design:

    • Ensure that the maximum reverse voltage (Vr) and continuous forward current (If) ratings are not exceeded in the circuit design.
    • Consider the reverse recovery time (trr) when designing high-frequency circuits.
  5. Storage:

    • Store the diode in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the diode in its original packaging until ready for use to prevent damage.
  6. Testing:

    • Use a multimeter to test the diode for continuity and ensure it is functioning correctly before installation.
    • Test the diode under actual operating conditions to verify performance.
(For reference only)

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