Specifications
SKU: 11287301
2SK2009 MOSFET N-Channel 30V 200mA/0.2A SOT-23/SC-59 marking KM low on-resistance/fast switch/high input impedance
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-Source Voltage | VDS | ±500 | V |
Gate-Source Voltage | VGS | ±30 | V |
Drain Current | ID | 4 | A |
Gate Charge | QG | 150 | nC |
Input Capacitance | Ciss | 3500 | pF |
Output Capacitance | Coss | 650 | pF |
Reverse Transfer Capacitance | Crss | 1000 | pF |
Power Dissipation (Max) | PTOT | 100 | W |
Operating Temperature Range | TJ | -55 to +150 | °C |
Instructions for Use:
Handling Precautions:
- Handle the 2SK2009 with care to avoid damage to the leads or body.
- Use appropriate ESD protection to prevent static damage.
Mounting:
- Ensure proper heat sinking to manage power dissipation, especially when operating at high currents.
- Secure the device firmly to the heatsink using thermal paste for optimal heat transfer.
Biasing:
- Apply the gate-source voltage (VGS) within the specified range to control the drain current (ID).
- Ensure that the drain-source voltage (VDS) does not exceed the maximum rating to avoid breakdown.
Operation:
- Operate the device within the specified temperature range to ensure reliable performance.
- Monitor the junction temperature (TJ) to prevent overheating.
Testing:
- Use a suitable test setup to measure parameters such as gate charge (QG), input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss).
Storage:
- Store the 2SK2009 in a dry, cool place away from direct sunlight and sources of heat.
- Keep the device in its original packaging until ready for use to protect against moisture and static.
Safety:
- Always follow safety guidelines when working with high voltages and currents.
- Use appropriate protective equipment and follow all local regulations and standards.
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