Share:


2SK2009

Specifications

SKU: 11287301

BUY 2SK2009 https://www.utsource.net/itm/p/11287301.html
2SK2009 MOSFET N-Channel 30V 200mA/0.2A SOT-23/SC-59 marking KM low on-resistance/fast switch/high input impedance
Parameter Symbol Value Unit
Drain-Source Voltage VDS ±500 V
Gate-Source Voltage VGS ±30 V
Drain Current ID 4 A
Gate Charge QG 150 nC
Input Capacitance Ciss 3500 pF
Output Capacitance Coss 650 pF
Reverse Transfer Capacitance Crss 1000 pF
Power Dissipation (Max) PTOT 100 W
Operating Temperature Range TJ -55 to +150 °C

Instructions for Use:

  1. Handling Precautions:

    • Handle the 2SK2009 with care to avoid damage to the leads or body.
    • Use appropriate ESD protection to prevent static damage.
  2. Mounting:

    • Ensure proper heat sinking to manage power dissipation, especially when operating at high currents.
    • Secure the device firmly to the heatsink using thermal paste for optimal heat transfer.
  3. Biasing:

    • Apply the gate-source voltage (VGS) within the specified range to control the drain current (ID).
    • Ensure that the drain-source voltage (VDS) does not exceed the maximum rating to avoid breakdown.
  4. Operation:

    • Operate the device within the specified temperature range to ensure reliable performance.
    • Monitor the junction temperature (TJ) to prevent overheating.
  5. Testing:

    • Use a suitable test setup to measure parameters such as gate charge (QG), input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss).
  6. Storage:

    • Store the 2SK2009 in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the device in its original packaging until ready for use to protect against moisture and static.
  7. Safety:

    • Always follow safety guidelines when working with high voltages and currents.
    • Use appropriate protective equipment and follow all local regulations and standards.
(For reference only)

 Inquiry - 2SK2009