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BCP55-10

Specifications

SKU: 11287339

BUY BCP55-10 https://www.utsource.net/itm/p/11287339.html
BCP55-10 NPN Transistors(BJT) 60V 1A 130MHz 63~160 500mV/0.5V SOT-223/SC-73 marking BCP55 10 medium power
Parameter Value Unit
Part Number BCP55-10 -
Type Bipolar Transistor -
Collector-Emitter Voltage (Vce) 55 V
Emitter-Base Voltage (Veb) 5 V
Collector Current (Ic) 10 A
Power Dissipation (Ptot) 125 W
Operating Temperature Range -55 to 150 °C
Storage Temperature Range -65 to 150 °C
Package Type TO-247 -

Instructions:

  1. Handling:

    • Handle the BCP55-10 with care to avoid damage to the leads or the body.
    • Use proper anti-static precautions to prevent electrostatic discharge (ESD) damage.
  2. Mounting:

    • Ensure that the mounting surface is clean and flat.
    • Apply thermal compound between the transistor and the heat sink for optimal thermal performance.
    • Tighten the mounting screws to the recommended torque specifications to avoid over-tightening and potential damage.
  3. Soldering:

    • Preheat the PCB to reduce thermal shock.
    • Use a soldering iron with a temperature not exceeding 350°C.
    • Solder each lead for no more than 3 seconds to prevent overheating.
    • Allow the soldered joints to cool naturally without moving the component.
  4. Electrical Connections:

    • Connect the collector, base, and emitter leads according to the circuit diagram.
    • Ensure that the maximum ratings for voltage and current are not exceeded.
    • Use appropriate wire gauges to handle the current levels.
  5. Testing:

    • Test the transistor using a multimeter or a dedicated transistor tester.
    • Verify the continuity and resistance values to ensure proper functionality.
    • Check the operating temperature to ensure it remains within the specified range.
  6. Storage:

    • Store the BCP55-10 in a dry, cool place away from direct sunlight.
    • Keep the components in their original packaging until ready for use to protect against static and physical damage.
(For reference only)

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