Specifications
SKU: 11288227
DMP2066LSN-7 P-CHANNEL ENHANCEMENT MODE MOSFET 20V 4.6A SOT-23/SC-59 MARKING PS4
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Continuous Drain Current | ID | - | 6.5 | - | A |
Pulse Drain Current (t=10μs, duty cycle 1%) | IDP | - | 30 | - | A |
Drain-Source Breakdown Voltage | BVDSS | 20 | - | 30 | V |
Gate-Source Voltage | VGS | -2.5 | 0 | 4.5 | V |
Gate-Source Threshold Voltage | VGS(th) | 0.8 | 1.2 | 1.6 | V |
On-State Resistance at VGS = 4.5V | RDS(on) | 2.5 | 3.5 | 4.5 | mΩ |
Total Gate Charge | Qg | - | 16 | - | nC |
Input Capacitance | Ciss | - | 160 | - | pF |
Output Capacitance | Coss | - | 40 | - | pF |
Reverse Transfer Capacitance | Crss | - | 10 | - | pF |
Junction Temperature | Tj | -55 | - | 150 | °C |
Storage Temperature Range | Tstg | -55 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- Handle the DMP2066LSN-7 with care to avoid damage to the pins and the device.
- Use appropriate ESD protection to prevent static damage.
Mounting:
- Ensure proper alignment of the device during mounting to avoid mechanical stress on the pins.
- Follow recommended soldering profiles to ensure reliable connections without overheating the device.
Operating Conditions:
- Do not exceed the maximum ratings specified in the table to avoid damage to the device.
- Ensure adequate heat dissipation if operating near the maximum continuous drain current.
Gate Drive:
- Apply the gate voltage within the specified range to ensure proper operation.
- Use a low-inductance path for the gate drive to minimize ringing and overshoot.
Thermal Management:
- Monitor the junction temperature to ensure it remains within the specified limits.
- Use heatsinks or other cooling methods if necessary to maintain safe operating temperatures.
Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Follow recommended storage conditions to ensure long-term reliability.
Testing:
- Use appropriate test equipment and methods to verify the performance parameters of the device.
- Refer to the datasheet for specific test conditions and procedures.
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