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2SA2015

Specifications

SKU: 11289113

BUY 2SA2015 https://www.utsource.net/itm/p/11289113.html
2SA2015 PNP transistors(BJT) -30V -8A 290MHz 200~560 -340mV/-0.34V SOT-89/PCP marking AV DC-DCconvertor/relay driver
Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCE - - 80 V
Base-Emitter Voltage VBE - - 7 V
Collector Current IC - - 15 A
Base Current IB - - 3 A
Power Dissipation PT - - 130 W
Junction Temperature TJ -20 - 150 °C
Storage Temperature TSTG -50 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • Avoid exposing the transistor to temperatures outside its specified operating range.
    • Use appropriate heat sinks to manage power dissipation and prevent overheating.
  2. Mounting:

    • Ensure proper alignment and secure mounting to avoid mechanical stress.
    • Use thermal compound between the transistor and heat sink for efficient heat transfer.
  3. Electrical Connections:

    • Connect the collector (C), base (B), and emitter (E) terminals correctly.
    • Ensure that the base current is within the specified limits to avoid damage.
  4. Operating Conditions:

    • Do not exceed the maximum ratings for collector-emitter voltage, base-emitter voltage, collector current, base current, and power dissipation.
    • Operate the device within the recommended junction temperature range to ensure reliable performance.
  5. Storage:

    • Store the transistor in a dry, cool place away from direct sunlight and extreme temperatures.
    • Handle with care to avoid static discharge which can damage the device.
(For reference only)

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