Specifications
SKU: 11289113
2SA2015 PNP transistors(BJT) -30V -8A 290MHz 200~560 -340mV/-0.34V SOT-89/PCP marking AV DC-DCconvertor/relay driver
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 80 | V |
Base-Emitter Voltage | VBE | - | - | 7 | V |
Collector Current | IC | - | - | 15 | A |
Base Current | IB | - | - | 3 | A |
Power Dissipation | PT | - | - | 130 | W |
Junction Temperature | TJ | -20 | - | 150 | °C |
Storage Temperature | TSTG | -50 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- Avoid exposing the transistor to temperatures outside its specified operating range.
- Use appropriate heat sinks to manage power dissipation and prevent overheating.
Mounting:
- Ensure proper alignment and secure mounting to avoid mechanical stress.
- Use thermal compound between the transistor and heat sink for efficient heat transfer.
Electrical Connections:
- Connect the collector (C), base (B), and emitter (E) terminals correctly.
- Ensure that the base current is within the specified limits to avoid damage.
Operating Conditions:
- Do not exceed the maximum ratings for collector-emitter voltage, base-emitter voltage, collector current, base current, and power dissipation.
- Operate the device within the recommended junction temperature range to ensure reliable performance.
Storage:
- Store the transistor in a dry, cool place away from direct sunlight and extreme temperatures.
- Handle with care to avoid static discharge which can damage the device.
Inquiry - 2SA2015