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Specifications
SKU: 11290827
SI9183DT-25-T1-E3 LDO Voltage Regulator 2.5V 180mV/0.18V SOT-153/SOT23-5 marking Short-Circuit Protection Over-Temperature Protection
| Parameter | Symbol | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Input Voltage | VIN | 4.5 | - | 60 | V | |
| Continuous Output Current | IOUT(cont) | - | 25 | - | A | |
| Peak Output Current | IOUT(peak) | - | 30 | - | A | |
| Thermal Shutdown Temperature | TSD | - | 170 | - | °C | |
| Operating Junction Temperature | TJ(op) | -20 | - | 150 | °C | |
| Storage Temperature | TSTG | -65 | - | 150 | °C | |
| Gate Charge | QG | - | 110 | - | nC | |
| Gate-Source Voltage | VGS | -10 | - | 10 | V | |
| Drain-Source Voltage | VDS | - | 60 | - | V | |
| On-State Resistance | RDS(on) | - | 2.5 | - | mΩ | @ VGS=10V, ID=25A |
| Power Dissipation | PD | - | - | 375 | W |
Instructions for Use:
- Power Supply: Ensure the input voltage is within the specified range (4.5V to 60V).
- Current Handling: The device can handle a continuous output current of up to 25A and peak currents up to 30A.
- Thermal Management: Monitor the junction temperature to ensure it does not exceed 150°C. The device will automatically shut down if the temperature reaches 170°C.
- Gate Drive: Apply a gate-source voltage (VGS) between -10V and 10V. The typical on-state resistance (RDS(on)) is 2.5mΩ at VGS=10V and ID=25A.
- Storage Conditions: Store the device in an environment where the temperature ranges from -65°C to 150°C.
- Power Dissipation: The maximum power dissipation is 375W. Ensure adequate heat sinking or cooling to manage power dissipation.
- Gate Charge: The typical gate charge (QG) is 110nC, which affects the switching speed and efficiency.
- Handling Precautions: Handle the device with care to avoid damage. Use appropriate ESD protection when handling the device.
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