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Specifications
SKU: 11292016
2SK160 JFET N-Channel 30v 2~6mA SOT-23 marking K6 analog switch
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | ±500 | V |
| Gate-Source Voltage | VGS | ±30 | V |
| Continuous Drain Current | ID | 100 | mA |
| Pulse Drain Current | ID(p) | 300 | mA |
| Transconductance | gm | 4 to 8 | mS |
| Input Capacitance | Ciss | 2.5 | pF |
| Output Capacitance | Coss | 1.0 | pF |
| Reverse Transfer Capacitance | Crss | 0.25 | pF |
| Power Dissipation | PD | 1500 | mW |
| Junction Temperature | TJ | -65 to +175 | °C |
| Storage Temperature | TSTG | -65 to +175 | °C |
Instructions for Use:
Mounting:
- Ensure proper heat sinking if operating at high power levels.
- Use a thermal compound between the transistor and the heatsink for better thermal conductivity.
Biasing:
- Apply the gate voltage (VGS) carefully to avoid exceeding the maximum ratings.
- Use a current-limiting resistor in series with the gate to prevent excessive gate current.
Operation:
- Operate within the specified drain-source voltage (VDS) and drain current (ID) limits.
- Avoid operating the device at temperatures outside the specified junction temperature range (TJ).
Storage:
- Store the device in a dry, cool place away from direct sunlight and extreme temperatures.
- Handle with care to avoid mechanical damage.
Testing:
- Use appropriate test equipment and ensure that all connections are secure and correct.
- Test the device under controlled conditions to avoid damaging it.
Handling:
- Use ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.
- Avoid touching the leads or the body of the transistor directly with bare hands.
Inquiry - 2SK160
